Light sensitive memristors based on GeSixOy films with Ge nanoclusters

Vladimir A. Volodin, Gennady N. Kamaev, Ivan D. Yushkov, Gregory K. Krivyakin, Svetlana G. Cherkova, Michel Vergnat

Результат исследования: Публикации в книгах, отчётах, сборниках, трудах конференцийстатья в сборнике материалов конференциинаучнаярецензирование

Аннотация

For the development of information technology, more and more memory arrays are needed. Recently, memristors have been the most promising candidates for the creation of modern universal memory. The possibility of light stimulated resistive switching (RS) is promising for creating optical computers, technical vision and neuron networks. The studied SixGeyOz solid alloys films (~50-65 nm) were obtained by simultaneous evaporation of GeO2 and SiO2 (or SiO) powders in high vacuum (10-8 Torr) and deposition onto n+-type, p+-type Si(001), and on Al/SiO2/Si(001) heated up to 100°C. The transparent indium tin oxide (ITO) contacts were used as top electrode. It was found, that as-deposited GeOx[SiO](1-x) films contain amorphous Ge (a-Ge) nanoclusters. The furnace annealing at temperature 500 oC lead to further forming of a-Ge clusters in both types of the films. Reversible (up to several thousand cycles) RS from high resistance state (HRS) to low resistance state (LRS) (memristor effect) were observed for the semiconductor-dielectric-metal structures, namely p+-Si (or n+-Si)/GeO[SiO2] (or GeO[SiO])/ITO structures (MIS structures) in air atmosphere. Both negative and positive photoconductivity was observed in the annealed MIS structure when both negative/positive voltage biases were applied to the top ITO electrode. This is possibly due to light-stimulated recharging of holes from a-Ge nanoclusters, which act as deep traps. The effects of light-induced RS was observed for annealed MIS structures based on GeO[SiO] films with a-Ge nanoclusters. These results are promising for creation of photomemristors and optoelectronic devices combining the properties of a memristor.

Язык оригиналаанглийский
Название основной публикацииInternational Conference on Micro- and Nano-Electronics 2021
РедакторыVladimir F. Lukichev, Konstantin V. Rudenko
ИздательSPIE
ISBN (электронное издание)9781510651906
DOI
СостояниеОпубликовано - 2022
Событие14th International Conference on Micro- and Nano-Electronics 2021, ICMNE 2021 - Zvenigorod, Российская Федерация
Продолжительность: 4 окт 20218 окт 2021

Серия публикаций

НазваниеProceedings of SPIE - The International Society for Optical Engineering
Том12157
ISSN (печатное издание)0277-786X
ISSN (электронное издание)1996-756X

Конференция

Конференция14th International Conference on Micro- and Nano-Electronics 2021, ICMNE 2021
СтранаРоссийская Федерация
ГородZvenigorod
Период04.10.202108.10.2021

Предметные области OECD FOS+WOS

  • 1.01 МАТЕМАТИКА
  • 1.03 ФИЗИЧЕСКИЕ НАУКИ И АСТРОНОМИЯ
  • 2.02.IQ ИНЖЕНЕРИЯ, ЭЛЕКТРИЧЕСКАЯ И ЭЛЕКТРОННАЯ

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