Light emission from Ge(Si)/SOI self-assembled nanoislands embedded in photonic crystal slabs of various periods with and without cavities

M. V. Stepikhova, A. V. Novikov, A. N. Yablonskiy, M. V. Shaleev, D. E. Utkin, V. V. Rutckaia, E. V. Skorokhodov, S. M. Sergeev, D. V. Yurasov, Z. F. Krasilnik

Результат исследования: Научные публикации в периодических изданияхстатья

6 Цитирования (Scopus)

Аннотация

Luminescent properties of self-assembled Ge(Si)/SOI nanoislands embedded in two-dimensional photonic crystal (PhC) slabs with and without L3 cavities were studied with PhC period a varied between 350 and 600 nm. For small periods (a ≤ 450 nm), the nanoisland luminescence, which spans over the wavelength range from 1.2 to 1.6 μm, overlaps with the PhC bandgap resulting in a coupling with the localized modes of an L3 cavity. It is shown that for larger periods (a > 450 nm), nanoisland emission couples to the radiative modes above the bandgap located in the vicinity of the -point of the photonic crystal Brillouin zone and is characterized by the low group velocity. In this case, a significant (up to 35-fold) increase in the PL intensity was observed in a number of PhCs without a cavity. From a technological point of view, the latter result makes such types of photonic crystal structures particularly promising for the realization of Si-based light emitters operating in the telecommunication wavelength range because, firstly, their manufacture does not require a precise cavity formation and, secondly, they provide a much larger area for the radiating region, as compared with PhC cavities.

Язык оригиналаанглийский
Номер статьи024003
ЖурналSemiconductor Science and Technology
Том34
Номер выпуска2
DOI
СостояниеОпубликовано - 10 янв 2019

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  • Цитировать

    Stepikhova, M. V., Novikov, A. V., Yablonskiy, A. N., Shaleev, M. V., Utkin, D. E., Rutckaia, V. V., Skorokhodov, E. V., Sergeev, S. M., Yurasov, D. V., & Krasilnik, Z. F. (2019). Light emission from Ge(Si)/SOI self-assembled nanoislands embedded in photonic crystal slabs of various periods with and without cavities. Semiconductor Science and Technology, 34(2), [024003]. https://doi.org/10.1088/1361-6641/aaf7a7