The conductance of a GaAs-based suspended quantum point contact (QPC) equipped with lateral side gates has been experimentally studied in the absence of the external magnetic field. The half-integer conductance plateau (0.5×2e2/h) has been observed when an asymmetric voltage between the side gates is applied. The appearance of this plateau has been attributed to the spin degeneracy lifting caused by the spin-orbit coupling associated with the lateral electric field in the asymmetrically biased QPC. We have experimentally demonstrated that, despite the relatively small g-factor in GaAs, the observation of the spin polarization in the GaAs-based QPC became possible after the suspension due to the enhancement of the electron-electron interaction and the effect of the electric field guiding. These features are caused by a partial confinement of the electric field lines within a suspended semiconductor layer with a high dielectric constant.

Язык оригиналаанглийский
Номер статьи082102
Число страниц4
ЖурналApplied Physics Letters
Номер выпуска8
СостояниеОпубликовано - 19 фев 2018


Подробные сведения о темах исследования «Lateral-electric-field-induced spin polarization in a suspended GaAs quantum point contact». Вместе они формируют уникальный семантический отпечаток (fingerprint).