Laser-induced damage threshold of the nonlinear crystals BaGa4Se7 and BaGa2GeSe6 at 2091 nm in the nanosecond regime

Nadezhda Yu Kostyukova, Andrey A. Boyko, Ilya D. Eranov, Oleg L. Antipov, Dmitry B. Kolker, Anton I. Kostyukov, Evgenii Yu Erushin, Ilya B. Miroshnichenko, Dmitrii V. Badikov, Valeriy V. Badikov

Результат исследования: Научные публикации в периодических изданияхстатья

Аннотация

The surface laser-induced damage threshold (LIDT) of BaGa4Se7 and BaGa2GeSe6 nonlinear crystals was studied at 2091 nm. Both yellow and dark yellow phases of BaGa4Se7 were investigated. The Ho:YAG laser generating nanosecond pulses at 2 kHz, 5 kHz, and 10 kHz was used as a radiation source. The R-on-1 procedure was applied to determine the 0% probability damage threshold. The LIDT of the dark yellow phase of BaGa4Se7 without cleavage planes is very close to the BaGa2GeSe6 LIDT and exceeds by ca. 30% the LIDT of the yellow phase of BaGa4Se7 at 2 and 5 kHz.

Язык оригиналаанглийский
Страницы (с-по)2655-2659
Число страниц5
ЖурналJournal of the Optical Society of America B: Optical Physics
Том37
Номер выпуска9
DOI
СостояниеОпубликовано - 1 сен 2020

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