Investigation of HgCdTe waveguide structures with quantum wells for long-wavelength stimulated emission

V. V. Rumyantsev, A. M. Kadykov, M. A. Fadeev, A. A. Dubinov, V. V. Utochkin, N. N. Mikhailov, S. A. Dvoretskii, S. V. Morozov, V. I. Gavrilenko

Результат исследования: Научные публикации в периодических изданияхстатья

4 Цитирования (Scopus)

Аннотация

The photoluminescence and stimulated emission during interband transitions in quantum wells based on HgCdTe placed in an insulator waveguide based on a wide-gap CdHgTe alloy are studied. Heterostructures with quantum wells based on HgCdTe are of interest for the development of long-wavelength lasers in the range of 25–60 μm, which is currently unattainable for quantum-cascade lasers. Optimal designs of quantum wells for attainment of long-wavelength stimulated emission under optical pumping are discussed. It is shown that narrow quantum wells from pure HgTe appear to be more promising for long-wavelength lasers in comparison with wide (potential) wells from the alloy due to the suppression of Auger recombination. It is demonstrated that molecular-beam epitaxy makes it possible to obtain structures for the localization of radiation with a wavelength of up to 25 μm at a high growth rate. Stimulated emission is obtained for wavelengths of 14–6 μm with a threshold pump intensity in the range of 100–500 W/cm2 at 20 K.

Язык оригиналаанглийский
Страницы (с-по)1557-1561
Число страниц5
ЖурналSemiconductors
Том51
Номер выпуска12
DOI
СостояниеОпубликовано - 1 дек 2017

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  • Цитировать

    Rumyantsev, V. V., Kadykov, A. M., Fadeev, M. A., Dubinov, A. A., Utochkin, V. V., Mikhailov, N. N., Dvoretskii, S. A., Morozov, S. V., & Gavrilenko, V. I. (2017). Investigation of HgCdTe waveguide structures with quantum wells for long-wavelength stimulated emission. Semiconductors, 51(12), 1557-1561. https://doi.org/10.1134/S106378261712017X