Interface Studies in HgTe/HgCdTe Quantum Wells

Nikolay Mikhailov; Vasiliy Shvets; Danil Ikusov; Ivan Uzhakov; Sergey Dvoretsky; Karim Mynbaev; Piotr Dluzewski; Jerzy Morgiel; Zbigniew Swiatek; Olexander Bonchyk; Ihor Izhnin

doi:10.1002/pssb.201900598

Interface Studies in HgTe/HgCdTe Quantum Wells

Nikolay Mikhailov, Vasiliy Shvets, Danil Ikusov, Ivan Uzhakov, Sergey Dvoretsky, Karim Mynbaev, Piotr Dluzewski, Jerzy Morgiel, Zbigniew Swiatek, Olexander Bonchyk, Ihor Izhnin

Учебно-научная лаборатория квантовых явлений в конденсированных системах ФФ

Результат исследования: Научные публикации в периодических изданиях › статья › рецензирование

3 Цитирования (Scopus)

Аннотация

Transmission electron microscopy (TEM) is used for the study of interfaces in two HgTe/HgCdTe single quantum-well (QW) structures grown by molecular beam epitaxy on GaAs substrates. The studies are conducted in bright-field and scanning/high-angle annular dark field modes. The effect of the growth mode on the sharpness of interfaces in the QWs is investigated. Effective in situ ellipsometric control over chemical composition and thickness of the layers constituting the QW structures is demonstrated.

Язык оригинала	английский
Номер статьи	1900598
Число страниц	5
Журнал	Physica Status Solidi (B) Basic Research
Том	257
Номер выпуска	5
DOI	https://doi.org/10.1002/pssb.201900598
Состояние	Опубликовано - 1 мая 2020

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10.1002/pssb.201900598

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title = "Interface Studies in HgTe/HgCdTe Quantum Wells",

abstract = "Transmission electron microscopy (TEM) is used for the study of interfaces in two HgTe/HgCdTe single quantum-well (QW) structures grown by molecular beam epitaxy on GaAs substrates. The studies are conducted in bright-field and scanning/high-angle annular dark field modes. The effect of the growth mode on the sharpness of interfaces in the QWs is investigated. Effective in situ ellipsometric control over chemical composition and thickness of the layers constituting the QW structures is demonstrated.",

keywords = "composition profiles, ellipsometry, HgTe/HgCdTe quantum wells, interfaces, transmission electron microscopy, HgTe, HgCdTe quantum wells, DAMAGE",

author = "Nikolay Mikhailov and Vasiliy Shvets and Danil Ikusov and Ivan Uzhakov and Sergey Dvoretsky and Karim Mynbaev and Piotr Dluzewski and Jerzy Morgiel and Zbigniew Swiatek and Olexander Bonchyk and Ihor Izhnin",

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Interface Studies in HgTe/HgCdTe Quantum Wells. / Mikhailov, Nikolay; Shvets, Vasiliy; Ikusov, Danil и др.

В: Physica Status Solidi (B) Basic Research, Том 257, № 5, 1900598, 01.05.2020.

Результат исследования: Научные публикации в периодических изданиях › статья › рецензирование

TY - JOUR

T1 - Interface Studies in HgTe/HgCdTe Quantum Wells

AU - Mikhailov, Nikolay

AU - Shvets, Vasiliy

AU - Ikusov, Danil

AU - Uzhakov, Ivan

AU - Dvoretsky, Sergey

AU - Mynbaev, Karim

AU - Dluzewski, Piotr

AU - Morgiel, Jerzy

AU - Swiatek, Zbigniew

AU - Bonchyk, Olexander

AU - Izhnin, Ihor

PY - 2020/5/1

Y1 - 2020/5/1

N2 - Transmission electron microscopy (TEM) is used for the study of interfaces in two HgTe/HgCdTe single quantum-well (QW) structures grown by molecular beam epitaxy on GaAs substrates. The studies are conducted in bright-field and scanning/high-angle annular dark field modes. The effect of the growth mode on the sharpness of interfaces in the QWs is investigated. Effective in situ ellipsometric control over chemical composition and thickness of the layers constituting the QW structures is demonstrated.

AB - Transmission electron microscopy (TEM) is used for the study of interfaces in two HgTe/HgCdTe single quantum-well (QW) structures grown by molecular beam epitaxy on GaAs substrates. The studies are conducted in bright-field and scanning/high-angle annular dark field modes. The effect of the growth mode on the sharpness of interfaces in the QWs is investigated. Effective in situ ellipsometric control over chemical composition and thickness of the layers constituting the QW structures is demonstrated.

KW - composition profiles

KW - ellipsometry

KW - HgTe/HgCdTe quantum wells

KW - interfaces

KW - transmission electron microscopy

KW - HgTe

KW - HgCdTe quantum wells

KW - DAMAGE

UR - http://www.scopus.com/inward/record.url?scp=85079371240&partnerID=8YFLogxK

U2 - 10.1002/pssb.201900598

DO - 10.1002/pssb.201900598

M3 - Article

AN - SCOPUS:85079371240

VL - 257

JO - Physica Status Solidi (B): Basic Research

JF - Physica Status Solidi (B): Basic Research

SN - 0370-1972

IS - 5

M1 - 1900598

ER -

Interface Studies in HgTe/HgCdTe Quantum Wells

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