Infrared photoluminescence from GeO[SiO2] and GeO[SiO] solid alloy layers irradiated with swift heavy Xe ions

S. G. Cherkova; V. A. Volodin; V. A. Skuratov; M. Stoffel; H. Rinnert; M. Vergnat

doi:10.1016/j.jlumin.2020.117238

Infrared photoluminescence from GeO[SiO₂] and GeO[SiO] solid alloy layers irradiated with swift heavy Xe ions

S. G. Cherkova, V. A. Volodin, V. A. Skuratov, M. Stoffel, H. Rinnert, M. Vergnat

Результат исследования: Научные публикации в периодических изданиях › статья › рецензирование

2 Цитирования (Scopus)

Аннотация

Germanium silicate suboxide films deposited from GeO/SiO and GeO/SiO₂ precursors onto Si(001) substrates using evaporation in high vacuum were modified by swift heavy ions. The films were irradiated by 167 MeV Xe⁺²⁶ ions with fluences varying from 10¹¹ to 10¹³ cm⁻². We report photoluminescence in the infrared range both at low and at room temperature, which is most probably due to defect-induced radiative transitions in the films.

Язык оригинала	английский
Номер статьи	117238
Число страниц	4
Журнал	Journal of Luminescence
Том	223
DOI	https://doi.org/10.1016/j.jlumin.2020.117238
Состояние	Опубликовано - июл. 2020

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10.1016/j.jlumin.2020.117238

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@article{c31b169aecde4f518a61da86eed96fb3,

title = "Infrared photoluminescence from GeO[SiO2] and GeO[SiO] solid alloy layers irradiated with swift heavy Xe ions",

abstract = "Germanium silicate suboxide films deposited from GeO/SiO and GeO/SiO2 precursors onto Si(001) substrates using evaporation in high vacuum were modified by swift heavy ions. The films were irradiated by 167 MeV Xe+26 ions with fluences varying from 1011 to 1013 cm−2. We report photoluminescence in the infrared range both at low and at room temperature, which is most probably due to defect-induced radiative transitions in the films.",

keywords = "Defects, Ge and Si oxides, Photoluminescence, Swift heavy ions, FILMS, OXIDE, NANOCRYSTALS",

author = "Cherkova, {S. G.} and Volodin, {V. A.} and Skuratov, {V. A.} and M. Stoffel and H. Rinnert and M. Vergnat",

note = "Publisher Copyright: {\textcopyright} 2020 Elsevier B.V.",

year = "2020",

month = jul,

doi = "10.1016/j.jlumin.2020.117238",

language = "English",

volume = "223",

journal = "Journal of Luminescence",

issn = "0022-2313",

publisher = "Elsevier",

}

Infrared photoluminescence from GeO[SiO₂] and GeO[SiO] solid alloy layers irradiated with swift heavy Xe ions. / Cherkova, S. G.; Volodin, V. A.; Skuratov, V. A. и др.

В: Journal of Luminescence, Том 223, 117238, 07.2020.

Результат исследования: Научные публикации в периодических изданиях › статья › рецензирование

TY - JOUR

T1 - Infrared photoluminescence from GeO[SiO2] and GeO[SiO] solid alloy layers irradiated with swift heavy Xe ions

AU - Cherkova, S. G.

AU - Volodin, V. A.

AU - Skuratov, V. A.

AU - Stoffel, M.

AU - Rinnert, H.

AU - Vergnat, M.

PY - 2020/7

Y1 - 2020/7

N2 - Germanium silicate suboxide films deposited from GeO/SiO and GeO/SiO2 precursors onto Si(001) substrates using evaporation in high vacuum were modified by swift heavy ions. The films were irradiated by 167 MeV Xe+26 ions with fluences varying from 1011 to 1013 cm−2. We report photoluminescence in the infrared range both at low and at room temperature, which is most probably due to defect-induced radiative transitions in the films.

AB - Germanium silicate suboxide films deposited from GeO/SiO and GeO/SiO2 precursors onto Si(001) substrates using evaporation in high vacuum were modified by swift heavy ions. The films were irradiated by 167 MeV Xe+26 ions with fluences varying from 1011 to 1013 cm−2. We report photoluminescence in the infrared range both at low and at room temperature, which is most probably due to defect-induced radiative transitions in the films.

KW - Defects

KW - Ge and Si oxides

KW - Photoluminescence

KW - Swift heavy ions

KW - FILMS

KW - OXIDE

KW - NANOCRYSTALS

UR - http://www.scopus.com/inward/record.url?scp=85082387838&partnerID=8YFLogxK

U2 - 10.1016/j.jlumin.2020.117238

DO - 10.1016/j.jlumin.2020.117238

M3 - Article

AN - SCOPUS:85082387838

VL - 223

JO - Journal of Luminescence

JF - Journal of Luminescence

SN - 0022-2313

M1 - 117238

ER -