Influence of Substrate Temperature and Sulfurization on Sputtered Cu2SnGe(S,Se)(3) Thin Films for Solar Cell Application

Mayank Dubey, Gaurav Siddharth, Ruchi Singh, Chandrabhan Patel, Sanjay Kumar, Myo Than Htay, Victor V. Atuchin, Shaibal Mukherjee

Результат исследования: Научные публикации в периодических изданияхстатьярецензирование

Аннотация

This work presents the influence of substrate temperature (Tsub) and post-sulfurization on compositional, structural, electrical, and optical properties of dual-ion beam sputtering (DIBS)-grown Cu2(Sn,Ge)(S,Se)3 (CTGSSe) thin films grown on a soda-lime glass (SLG) substrate using a single target. Post-sulfurization of CTGSSe thin films is carried out in a quartz tube chemical vapor deposition (CVD) system. X-ray diffraction (XRD) analysis reveals that the crystal structure of CTGSSe thin films is preferentially tetragonal with (112) and (204) lattice planes at 2θ values of 27.3° and 47.3°, respectively. Field-emission scanning electron microscopy (SEM) has emphasized that the high Tsubgrowth resulted in a larger grain size of 87 nm and better thin-film morphology. Spectroscopic ellipsometry (SE) analysis shows the bandgap values of 1.46-1.62 eV by varying Tsub from room temperature (RT) to 300 °C. Furthermore, the bandgap widens from 1.56 to 1.64 eV in the CTGSSe thin films due to post-sulfurization.

Язык оригиналаанглийский
Страницы (с-по)2488-2493
Число страниц6
ЖурналIEEE Transactions on Electron Devices
Том69
Номер выпуска5
Ранняя дата в режиме онлайн25 мар. 2022
DOI
СостояниеОпубликовано - 1 мая 2022

Предметные области OECD FOS+WOS

  • 2.02.IQ ИНЖЕНЕРИЯ, ЭЛЕКТРИЧЕСКАЯ И ЭЛЕКТРОННАЯ
  • 1.03.UB ФИЗИКА, ПРИКЛАДНАЯ

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