Influence of Substrate Temperature and Sulfurization on Sputtered Cu2SnGe(S,Se)(3) Thin Films for Solar Cell Application

Mayank Dubey; Gaurav Siddharth; Ruchi Singh; Chandrabhan Patel; Sanjay Kumar; Myo Than Htay; Victor V. Atuchin; Shaibal Mukherjee

doi:10.1109/TED.2022.3159509

Influence of Substrate Temperature and Sulfurization on Sputtered Cu2SnGe(S,Se)(3) Thin Films for Solar Cell Application

Mayank Dubey, Gaurav Siddharth, Ruchi Singh, Chandrabhan Patel, Sanjay Kumar, Myo Than Htay, Victor V. Atuchin, Shaibal Mukherjee

Отдел прикладной физики ФФ

Результат исследования: Научные публикации в периодических изданиях › статья › рецензирование

Аннотация

This work presents the influence of substrate temperature (Tsub) and post-sulfurization on compositional, structural, electrical, and optical properties of dual-ion beam sputtering (DIBS)-grown Cu2(Sn,Ge)(S,Se)3 (CTGSSe) thin films grown on a soda-lime glass (SLG) substrate using a single target. Post-sulfurization of CTGSSe thin films is carried out in a quartz tube chemical vapor deposition (CVD) system. X-ray diffraction (XRD) analysis reveals that the crystal structure of CTGSSe thin films is preferentially tetragonal with (112) and (204) lattice planes at 2θ values of 27.3° and 47.3°, respectively. Field-emission scanning electron microscopy (SEM) has emphasized that the high Tsubgrowth resulted in a larger grain size of 87 nm and better thin-film morphology. Spectroscopic ellipsometry (SE) analysis shows the bandgap values of 1.46-1.62 eV by varying Tsub from room temperature (RT) to 300 °C. Furthermore, the bandgap widens from 1.56 to 1.64 eV in the CTGSSe thin films due to post-sulfurization.

Язык оригинала	английский
Страницы (с-по)	2488-2493
Число страниц	6
Журнал	IEEE Transactions on Electron Devices
Том	69
Номер выпуска	5
Ранняя дата в режиме онлайн	25 мар. 2022
DOI	https://doi.org/10.1109/TED.2022.3159509
Состояние	Опубликовано - 1 мая 2022

Предметные области OECD FOS+WOS

2.02.IQ ИНЖЕНЕРИЯ, ЭЛЕКТРИЧЕСКАЯ И ЭЛЕКТРОННАЯ
1.03.UB ФИЗИКА, ПРИКЛАДНАЯ

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10.1109/TED.2022.3159509

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@article{0042758ddb564df5abf0596104d1f47e,

title = "Influence of Substrate Temperature and Sulfurization on Sputtered Cu2SnGe(S,Se)(3) Thin Films for Solar Cell Application",

abstract = "This work presents the influence of substrate temperature (Tsub) and post-sulfurization on compositional, structural, electrical, and optical properties of dual-ion beam sputtering (DIBS)-grown Cu2(Sn,Ge)(S,Se)3 (CTGSSe) thin films grown on a soda-lime glass (SLG) substrate using a single target. Post-sulfurization of CTGSSe thin films is carried out in a quartz tube chemical vapor deposition (CVD) system. X-ray diffraction (XRD) analysis reveals that the crystal structure of CTGSSe thin films is preferentially tetragonal with (112) and (204) lattice planes at 2θ values of 27.3° and 47.3°, respectively. Field-emission scanning electron microscopy (SEM) has emphasized that the high Tsubgrowth resulted in a larger grain size of 87 nm and better thin-film morphology. Spectroscopic ellipsometry (SE) analysis shows the bandgap values of 1.46-1.62 eV by varying Tsub from room temperature (RT) to 300 °C. Furthermore, the bandgap widens from 1.56 to 1.64 eV in the CTGSSe thin films due to post-sulfurization.",

keywords = "Cu-2(Sn,Ge)(S,Se)(3) (CTGSSe), dual-ion beam sputtering (DIBS), substrate temperature, sulfurization, SELENIZATION, FABRICATION, LAYER, Substrate temperature, Sulfurization, Cu (Sn,Ge)(S,Se) (CTGSSe), Dual-ion beam sputtering (DIBS)",

author = "Mayank Dubey and Gaurav Siddharth and Ruchi Singh and Chandrabhan Patel and Sanjay Kumar and Htay, {Myo Than} and Atuchin, {Victor V.} and Shaibal Mukherjee",

note = "This work was supported by the DST-RSF Project under Grant DST/INT/RUS/RSF/P-20. The work of S. Kumar was supported by DST through Inspire Fellowship for the Ph.D. program under Grant IF170791. The work of R. Singh was supported by UGC through the UGC-NET SRF Fellowship. The work of V.V. Atuchin was supported by the Ministry of Science and Higher Education of Russia under Project 075-15-2020-797 (13.1902.21.0024).",

year = "2022",

month = may,

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doi = "10.1109/TED.2022.3159509",

language = "English",

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Influence of Substrate Temperature and Sulfurization on Sputtered Cu2SnGe(S,Se)(3) Thin Films for Solar Cell Application. / Dubey, Mayank; Siddharth, Gaurav; Singh, Ruchi и др.

В: IEEE Transactions on Electron Devices, Том 69, № 5, 01.05.2022, стр. 2488-2493.

Результат исследования: Научные публикации в периодических изданиях › статья › рецензирование

TY - JOUR

T1 - Influence of Substrate Temperature and Sulfurization on Sputtered Cu2SnGe(S,Se)(3) Thin Films for Solar Cell Application

AU - Dubey, Mayank

AU - Siddharth, Gaurav

AU - Singh, Ruchi

AU - Patel, Chandrabhan

AU - Kumar, Sanjay

AU - Htay, Myo Than

AU - Atuchin, Victor V.

AU - Mukherjee, Shaibal

N1 - This work was supported by the DST-RSF Project under Grant DST/INT/RUS/RSF/P-20. The work of S. Kumar was supported by DST through Inspire Fellowship for the Ph.D. program under Grant IF170791. The work of R. Singh was supported by UGC through the UGC-NET SRF Fellowship. The work of V.V. Atuchin was supported by the Ministry of Science and Higher Education of Russia under Project 075-15-2020-797 (13.1902.21.0024).

PY - 2022/5/1

Y1 - 2022/5/1

N2 - This work presents the influence of substrate temperature (Tsub) and post-sulfurization on compositional, structural, electrical, and optical properties of dual-ion beam sputtering (DIBS)-grown Cu2(Sn,Ge)(S,Se)3 (CTGSSe) thin films grown on a soda-lime glass (SLG) substrate using a single target. Post-sulfurization of CTGSSe thin films is carried out in a quartz tube chemical vapor deposition (CVD) system. X-ray diffraction (XRD) analysis reveals that the crystal structure of CTGSSe thin films is preferentially tetragonal with (112) and (204) lattice planes at 2θ values of 27.3° and 47.3°, respectively. Field-emission scanning electron microscopy (SEM) has emphasized that the high Tsubgrowth resulted in a larger grain size of 87 nm and better thin-film morphology. Spectroscopic ellipsometry (SE) analysis shows the bandgap values of 1.46-1.62 eV by varying Tsub from room temperature (RT) to 300 °C. Furthermore, the bandgap widens from 1.56 to 1.64 eV in the CTGSSe thin films due to post-sulfurization.

AB - This work presents the influence of substrate temperature (Tsub) and post-sulfurization on compositional, structural, electrical, and optical properties of dual-ion beam sputtering (DIBS)-grown Cu2(Sn,Ge)(S,Se)3 (CTGSSe) thin films grown on a soda-lime glass (SLG) substrate using a single target. Post-sulfurization of CTGSSe thin films is carried out in a quartz tube chemical vapor deposition (CVD) system. X-ray diffraction (XRD) analysis reveals that the crystal structure of CTGSSe thin films is preferentially tetragonal with (112) and (204) lattice planes at 2θ values of 27.3° and 47.3°, respectively. Field-emission scanning electron microscopy (SEM) has emphasized that the high Tsubgrowth resulted in a larger grain size of 87 nm and better thin-film morphology. Spectroscopic ellipsometry (SE) analysis shows the bandgap values of 1.46-1.62 eV by varying Tsub from room temperature (RT) to 300 °C. Furthermore, the bandgap widens from 1.56 to 1.64 eV in the CTGSSe thin films due to post-sulfurization.

KW - Cu-2(Sn,Ge)(S,Se)(3) (CTGSSe)

KW - dual-ion beam sputtering (DIBS)

KW - substrate temperature

KW - sulfurization

KW - SELENIZATION

KW - FABRICATION

KW - LAYER

KW - Substrate temperature

KW - Sulfurization

KW - Cu (Sn,Ge)(S,Se) (CTGSSe)

KW - Dual-ion beam sputtering (DIBS)

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U2 - 10.1109/TED.2022.3159509

DO - 10.1109/TED.2022.3159509

M3 - Article

VL - 69

SP - 2488

EP - 2493

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

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