Influence of quantizing magnetic field and Rashba effect on indium arsenide metal-oxide-semiconductor structure accumulation capacitance

A. P. Kovchavtsev, M. S. Aksenov, A. V. Tsarenko, A. E. Nastovjak, A. G. Pogosov, D. A. Pokhabov, O. E. Tereshchenko, N. A. Valisheva

Результат исследования: Научные публикации в периодических изданияхстатья

Аннотация

The accumulation capacitance oscillations behavior in the n-InAs metal-oxide-semiconductor structures with different densities of the built-in charge (Dbc) and the interface traps (Dit) at temperature 4.2 K in the magnetic field (B) 2-10 T, directed perpendicular to the semiconductor-dielectric interface, is studied. A decrease in the oscillation frequency and an increase in the capacitance oscillation amplitude are observed with the increase in B. At the same time, for a certain surface accumulation band bending, the influence of the Rashba effect, which is expressed in the oscillations decay and breakdown, is traced. The experimental capacitance-voltage curves are in a good agreement with the numeric simulation results of the self-consistent solution of Schrödinger and Poisson equations in the magnetic field, taking into account the quantization, nonparabolicity of dispersion law, and Fermi-Dirac electron statistics, with the allowance for the Rashba effect. The Landau quantum level broadening in a two-dimensional electron gas (Lorentzian-shaped density of states), due to the electron scattering mechanism, linearly depends on the magnetic field. The correlation between the interface electronic properties and the characteristic scattering times was established.

Язык оригиналаанглийский
Номер статьи173901
Число страниц6
ЖурналJournal of Applied Physics
Том123
Номер выпуска17
DOI
СостояниеОпубликовано - 7 мая 2018

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