@article{b5148a72e813420bb9aa5a51c7acb859,
title = "Influence of a Low-Temperature GaAs Dislocation Filter on the Perfection of GaAs/Si Layers",
abstract = "The influence of dislocation filters based on low-temperature layers (LT) of GaAs and postgrowth annealing on the perfection of GaAs/Si heterostructures is discussed. It is shown that LT-GaAs layers reduce the density of threading dislocations and surface roughness. Post-growth annealing at a temperature of 650 °C reduces the concentration of nonradiative recombination centers in GaAs/Si layers to a level close to the level in GaAs layers grown on a matched substrate.",
keywords = "dislocation filter, epitaxy, low-temperature GaAs, GROWN GAAS, FILMS, COEFFICIENT, MOLECULAR-BEAM EPITAXY, ON-SI, DENSITY REDUCTION, MISFIT, MOCVD, DEPENDENCE",
author = "Abramkin, {D. S.} and Petrushkov, {M. O.} and Emel{\textquoteright}yanov, {E. A.} and Putyato, {M. A.} and Semyagin, {B. R.} and Vasev, {A. V.} and Esin, {M. Yu} and Loshkarev, {I. D.} and Gutakovskii, {A. K.} and Preobrazhenskii, {V. V.} and Shamirzaev, {T. S.}",
year = "2018",
month = mar,
day = "1",
doi = "10.3103/S8756699018020103",
language = "English",
volume = "54",
pages = "181--186",
journal = "Optoelectronics, Instrumentation and Data Processing",
issn = "8756-6990",
publisher = "Allerton Press Inc.",
number = "2",
}