Indium-Induced Crystallization of Thin Films of Amorphous Silicon Suboxide

A. O. Zamchiy; E. A. Baranov; I. E. Merkulova; N. A. Lunev; V. A. Volodin; E. A. Maksimovskii

doi:10.1134/S1063785020060280

Indium-Induced Crystallization of Thin Films of Amorphous Silicon Suboxide

A. O. Zamchiy, E. A. Baranov, I. E. Merkulova, N. A. Lunev, V. A. Volodin, E. A. Maksimovskii

Результат исследования: Научные публикации в периодических изданиях › статья

Аннотация

A new method of obtaining polycrystalline silicon is proposed which is based on indium-induced crystallization of thin films of amorphous silicon suboxide with stoichiometric coefficient 0.5 (a-SiO_0.5). It is established that the use of indium in the course of a-SiO_0.5 annealing allows the crystallization temperature to be reduced to 600°C, which is significantly below the temperature of solid-phase crystallization of this material (850°C). The process of indium-induced crystallization of a-SiO_0.5 in high vacuum leads to the formation of free-standing micron sized particles of crystalline silicon.

Язык оригинала	английский
Страницы (с-по)	583-586
Число страниц	4
Журнал	Technical Physics Letters
Том	46
Номер выпуска	6
DOI	https://doi.org/10.1134/S1063785020060280
Состояние	Опубликовано - 1 июн 2020

Доступ к документу

10.1134/S1063785020060280

Link to publication in Scopus

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Indium-Induced Crystallization of Thin Films of Amorphous Silicon Suboxide. / Zamchiy, A. O.; Baranov, E. A.; Merkulova, I. E.; Lunev, N. A.; Volodin, V. A.; Maksimovskii, E. A.

В: Technical Physics Letters, Том 46, № 6, 01.06.2020, стр. 583-586.

Результат исследования: Научные публикации в периодических изданиях › статья

TY - JOUR

T1 - Indium-Induced Crystallization of Thin Films of Amorphous Silicon Suboxide

AU - Zamchiy, A. O.

AU - Baranov, E. A.

AU - Merkulova, I. E.

AU - Lunev, N. A.

AU - Volodin, V. A.

AU - Maksimovskii, E. A.

PY - 2020/6/1

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N2 - A new method of obtaining polycrystalline silicon is proposed which is based on indium-induced crystallization of thin films of amorphous silicon suboxide with stoichiometric coefficient 0.5 (a-SiO0.5). It is established that the use of indium in the course of a-SiO0.5 annealing allows the crystallization temperature to be reduced to 600°C, which is significantly below the temperature of solid-phase crystallization of this material (850°C). The process of indium-induced crystallization of a-SiO0.5 in high vacuum leads to the formation of free-standing micron sized particles of crystalline silicon.

AB - A new method of obtaining polycrystalline silicon is proposed which is based on indium-induced crystallization of thin films of amorphous silicon suboxide with stoichiometric coefficient 0.5 (a-SiO0.5). It is established that the use of indium in the course of a-SiO0.5 annealing allows the crystallization temperature to be reduced to 600°C, which is significantly below the temperature of solid-phase crystallization of this material (850°C). The process of indium-induced crystallization of a-SiO0.5 in high vacuum leads to the formation of free-standing micron sized particles of crystalline silicon.

KW - indium-induced crystallization

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