Indium-Induced Crystallization of Thin Films of Amorphous Silicon Suboxide

A. O. Zamchiy; E. A. Baranov; I. E. Merkulova; N. A. Lunev; V. A. Volodin; E. A. Maksimovskii

doi:10.1134/S1063785020060280

Indium-Induced Crystallization of Thin Films of Amorphous Silicon Suboxide

A. O. Zamchiy, E. A. Baranov, I. E. Merkulova, N. A. Lunev, V. A. Volodin, E. A. Maksimovskii

Результат исследования: Научные публикации в периодических изданиях › статья › рецензирование

Аннотация

A new method of obtaining polycrystalline silicon is proposed which is based on indium-induced crystallization of thin films of amorphous silicon suboxide with stoichiometric coefficient 0.5 (a-SiO_0.5). It is established that the use of indium in the course of a-SiO_0.5 annealing allows the crystallization temperature to be reduced to 600°C, which is significantly below the temperature of solid-phase crystallization of this material (850°C). The process of indium-induced crystallization of a-SiO_0.5 in high vacuum leads to the formation of free-standing micron sized particles of crystalline silicon.

Язык оригинала	английский
Страницы (с-по)	583-586
Число страниц	4
Журнал	Technical Physics Letters
Том	46
Номер выпуска	6
DOI	https://doi.org/10.1134/S1063785020060280
Состояние	Опубликовано - 1 июн 2020

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10.1134/S1063785020060280

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@article{a3a49c25fc694deca935663fee0ada50,

title = "Indium-Induced Crystallization of Thin Films of Amorphous Silicon Suboxide",

abstract = "A new method of obtaining polycrystalline silicon is proposed which is based on indium-induced crystallization of thin films of amorphous silicon suboxide with stoichiometric coefficient 0.5 (a-SiO0.5). It is established that the use of indium in the course of a-SiO0.5 annealing allows the crystallization temperature to be reduced to 600°C, which is significantly below the temperature of solid-phase crystallization of this material (850°C). The process of indium-induced crystallization of a-SiO0.5 in high vacuum leads to the formation of free-standing micron sized particles of crystalline silicon.",

keywords = "indium-induced crystallization, polycrystalline silicon, silicon suboxide, thin films",

author = "Zamchiy, {A. O.} and Baranov, {E. A.} and Merkulova, {I. E.} and Lunev, {N. A.} and Volodin, {V. A.} and Maksimovskii, {E. A.}",

year = "2020",

month = jun,

day = "1",

doi = "10.1134/S1063785020060280",

language = "English",

volume = "46",

pages = "583--586",

journal = "Technical Physics Letters",

issn = "1063-7850",

publisher = "PLEIADES PUBLISHING INC",

number = "6",

}

Indium-Induced Crystallization of Thin Films of Amorphous Silicon Suboxide. / Zamchiy, A. O.; Baranov, E. A.; Merkulova, I. E.; Lunev, N. A.; Volodin, V. A.; Maksimovskii, E. A.

В: Technical Physics Letters, Том 46, № 6, 01.06.2020, стр. 583-586.

Результат исследования: Научные публикации в периодических изданиях › статья › рецензирование

TY - JOUR

T1 - Indium-Induced Crystallization of Thin Films of Amorphous Silicon Suboxide

AU - Zamchiy, A. O.

AU - Baranov, E. A.

AU - Merkulova, I. E.

AU - Lunev, N. A.

AU - Volodin, V. A.

AU - Maksimovskii, E. A.

PY - 2020/6/1

Y1 - 2020/6/1

N2 - A new method of obtaining polycrystalline silicon is proposed which is based on indium-induced crystallization of thin films of amorphous silicon suboxide with stoichiometric coefficient 0.5 (a-SiO0.5). It is established that the use of indium in the course of a-SiO0.5 annealing allows the crystallization temperature to be reduced to 600°C, which is significantly below the temperature of solid-phase crystallization of this material (850°C). The process of indium-induced crystallization of a-SiO0.5 in high vacuum leads to the formation of free-standing micron sized particles of crystalline silicon.

AB - A new method of obtaining polycrystalline silicon is proposed which is based on indium-induced crystallization of thin films of amorphous silicon suboxide with stoichiometric coefficient 0.5 (a-SiO0.5). It is established that the use of indium in the course of a-SiO0.5 annealing allows the crystallization temperature to be reduced to 600°C, which is significantly below the temperature of solid-phase crystallization of this material (850°C). The process of indium-induced crystallization of a-SiO0.5 in high vacuum leads to the formation of free-standing micron sized particles of crystalline silicon.

KW - indium-induced crystallization

KW - polycrystalline silicon

KW - silicon suboxide

KW - thin films

UR - http://www.scopus.com/inward/record.url?scp=85088592425&partnerID=8YFLogxK

U2 - 10.1134/S1063785020060280

DO - 10.1134/S1063785020060280

M3 - Article

AN - SCOPUS:85088592425

VL - 46

SP - 583

EP - 586

JO - Technical Physics Letters

JF - Technical Physics Letters

SN - 1063-7850

IS - 6

ER -

Indium-Induced Crystallization of Thin Films of Amorphous Silicon Suboxide

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