Технические дисциплины и материаловедение
Growth temperature
100%
Silicon oxides
89%
Indium
80%
Nanowires
76%
Plasmas
57%
Photoluminescence
33%
Catalysts
17%
Temperature
16%
Substrates
14%
Electron beams
12%
Chemical vapor deposition
12%
Argon
11%
Fourier transforms
10%
Vacuum
9%
Infrared radiation
8%
Oxygen
8%
Hydrogen
8%
Silicon
8%
Chemical analysis
6%
Gases
5%
Физика и астрономия
silicon oxides
65%
indium
59%
nanowires
49%
catalysts
19%
photoluminescence
14%
gas jets
12%
temperature
12%
vacuum chambers
11%
bundles
10%
chemical composition
9%
transmittance
8%
argon
8%
vapor deposition
7%
synthesis
7%
electron beams
7%
hydrogen
6%
oxygen
6%
energy
6%
room temperature
5%
silicon
5%
Химические соединения
Silicon Oxide
76%
Nanowire
53%
Vacuum Chamber
14%
Plasma Chemical Vapour Deposition
14%
Electron Beam
11%
Transmittance
10%
Photoluminescence Spectrum
10%
Energy
9%
Catalyst
8%
Photoluminescence
7%
Fourier Transform Infrared Spectroscopy
5%
Ambient Reaction Temperature
5%
Dioxygen
5%