Increasing Saturated Electron-Drift Velocity in Donor–Acceptor Doped pHEMT Heterostructures

D. Yu Protasov, D. V. Gulyaev, A. K. Bakarov, A. I. Toropov, E. V. Erofeev, K. S. Zhuravlev

Результат исследования: Научные публикации в периодических изданияхстатья

3 Цитирования (Scopus)

Аннотация

Field dependences of the electron-drift velocity in typical pseudomorphic high-electron-mobility transistor (pHEMT) heteroepitaxial structures (HESs) and in those with donor–acceptor doped (DApHEMT) heterostructures with quantum-well (QW) depth increased by 0.8–0.9 eV with the aid of acceptor layers have been studied by a pulsed technique. It is established that the saturated electron-drift velocity in DA-pHEMT-HESs is 1.2–1.3 times greater than that in the usual pHEMT-HESs. The electroluminescence (EL) spectra of DA-pHEMT-HESs do not contain emission bands related to the recombination in widebandgap layers (QW barriers). The EL intensity in these HESs is not saturated with increasing electric field. This is indicative of a suppressed real-space transfer of hot electrons from QW to barrier layers, which accounts for the observed increase in the saturated electron-drift velocity.

Язык оригиналаанглийский
Страницы (с-по)260-262
Число страниц3
ЖурналTechnical Physics Letters
Том44
Номер выпуска3
DOI
СостояниеОпубликовано - 1 мар 2018

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