Increase in the Photocurrent in Layers of Ge/Si Quantum Dots by Modes of a Two-Dimensional Photonic Crystal

A. I. Yakimov, A. A. Bloshkin, V. V. Kirienko, A. V. Dvurechenskii, D. E. Utkin

Результат исследования: Научные публикации в периодических изданияхстатьярецензирование

Аннотация

It has been found that the introduction of layers of Ge/Si quantum dots in a two-dimensional photonic crystal leads to a strong (up to a factor of 5) increase in the photocurrent in the near infrared range. The photonic crystal is a regular triangular array of holes in a Si/Ge/Si heterostructure grown on a silicon-on-insulator substrate. The results have been explained by the excitation of planar modes of the photonic crystal, which propagate along the Ge/Si layers and effectively interact with interband transitions in quantum dots, by the incident light wave.

Язык оригиналаанглийский
Страницы (с-по)498-503
Число страниц6
ЖурналJETP Letters
Том113
Номер выпуска8
DOI
СостояниеОпубликовано - апр 2021

Предметные области OECD FOS+WOS

  • 1.03 ФИЗИЧЕСКИЕ НАУКИ И АСТРОНОМИЯ

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