@inproceedings{990702395ccd4be18f72432986ad5e3f,
title = "InAs Islands Formation on the InP(001) during High-Temperature Annealing in an As Flux",
abstract = "The InAs areas formation on the surface of InP (001) substrates annealed in an arsenic flux in an ultra-high vacuum was determined by scanning electron microscopy and atomic force microscopy. It is shown that the InAs areas are distributed non-uniformly over the surface and have an elongated shape predominantly along the [1 1 0] direction. The height and density of InAs areas increases with an increase in the annealing temperature.",
keywords = "annealing, indium arsenide, indium phosphide, nucleation, phosphorus",
author = "Danil Kolosovsky and Dmitry Dmitriev and Tatiana Gavrilova and Alexander Toropov and Anton Kozhukhov and Konstantin Zhuravlev",
note = "Funding Information: The research was funded by RFBR and number 20-42-540009. Publisher Copyright: {\textcopyright} 2021 IEEE.; 22nd IEEE International Conference of Young Professionals in Electron Devices and Materials, EDM 2021 ; Conference date: 30-06-2021 Through 04-07-2021",
year = "2021",
month = jun,
day = "30",
doi = "10.1109/EDM52169.2021.9507627",
language = "English",
series = "International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM",
publisher = "IEEE Computer Society",
pages = "17--21",
booktitle = "2021 IEEE 22nd International Conference of Young Professionals in Electron Devices and Materials, EDM 2021 - Proceedings",
address = "United States",
}