Improved device distribution in high-performance sinx resistive random access memory via arsenic ion implantation

Te Jui Yen, Albert Chin, Vladimir Gritsenko

Результат исследования: Научные публикации в периодических изданияхстатьярецензирование

1 Цитирования (Scopus)

Аннотация

Large device variation is a fundamental challenge for resistive random access memory (RRAM) array circuit. Improved device-to-device distributions of set and reset voltages in a SiNx RRAM device is realized via arsenic ion (As+) implantation. Besides, the As+-implanted SiNx RRAM device exhibits much tighter cycle-to-cycle distribution than the nonimplanted device. The As+-im-planted SiNx device further exhibits excellent performance, which shows high stability and a large 1.73 × 103 resistance window at 85 °C retention for 104 s, and a large 103 resistance window after 105 cycles of the pulsed endurance test. The current–voltage characteristics of high-and low-resistance states were both analyzed as space-charge-limited conduction mechanism. From the simulated defect distribution in the SiNx layer, a microscopic model was established, and the formation and rup-ture of defect-conductive paths were proposed for the resistance switching behavior. Therefore, the reason for such high device performance can be attributed to the sufficient defects created by As+ implantation that leads to low forming and operation power.

Язык оригиналаанглийский
Номер статьи1401
ЖурналNanomaterials
Том11
Номер выпуска6
DOI
СостояниеОпубликовано - июн 2021

Предметные области OECD FOS+WOS

  • 2.05 ТЕХНОЛОГИЯ МАТЕРИАЛОВ
  • 2.04 ХИМИЧЕСКИЕ ТЕХНОЛОГИИ
  • 1.03 ФИЗИЧЕСКИЕ НАУКИ И АСТРОНОМИЯ

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