Implementation of Terahertz High-Pass Filters Based on All-Metal Microstructures using Deep X-ray Lithography

A. N. Gentselev; S. A. Kuznetsov; F. N. Dultsev; B. G. Goldenberg; A. G. Zelinsky; V. I. Kondratyev; D. S. Tanygina

doi:10.3103/S875669901902002X

Implementation of Terahertz High-Pass Filters Based on All-Metal Microstructures using Deep X-ray Lithography

A. N. Gentselev, S. A. Kuznetsov, F. N. Dultsev, B. G. Goldenberg, A. G. Zelinsky, V. I. Kondratyev, D. S. Tanygina

Результат исследования: Научные публикации в периодических изданиях › статья › рецензирование

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Аннотация

A method for fabricating high-pass terahertz quasi-optical filters in the form of thick (up to 1 mm in thickness) self-bearing copper microstructures of subwavelength topology is described. This method is based on forming a high-aspect-ratio mask of SU-8 resist on a silicon wafer via deep X-ray lithography through a tungsten X-ray mask followed by electroplating a copper layer through the resistive mask. An example of a 212-µm thick structure with a cutoff frequency of 0.42 THz having the geometry of hexagon-shaped through-holes arranged on a triangular lattice is considered. The results of broadband THz characterization and electromagnetic analysis of the structure fabricated are presented.

Язык оригинала	английский
Страницы (с-по)	115-125
Число страниц	11
Журнал	Optoelectronics, Instrumentation and Data Processing
Том	55
Номер выпуска	2
DOI	https://doi.org/10.3103/S875669901902002X
Состояние	Опубликовано - 1 мар. 2019

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10.3103/S875669901902002X

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title = "Implementation of Terahertz High-Pass Filters Based on All-Metal Microstructures using Deep X-ray Lithography",

abstract = "A method for fabricating high-pass terahertz quasi-optical filters in the form of thick (up to 1 mm in thickness) self-bearing copper microstructures of subwavelength topology is described. This method is based on forming a high-aspect-ratio mask of SU-8 resist on a silicon wafer via deep X-ray lithography through a tungsten X-ray mask followed by electroplating a copper layer through the resistive mask. An example of a 212-µm thick structure with a cutoff frequency of 0.42 THz having the geometry of hexagon-shaped through-holes arranged on a triangular lattice is considered. The results of broadband THz characterization and electromagnetic analysis of the structure fabricated are presented.",

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author = "Gentselev, {A. N.} and Kuznetsov, {S. A.} and Dultsev, {F. N.} and Goldenberg, {B. G.} and Zelinsky, {A. G.} and Kondratyev, {V. I.} and Tanygina, {D. S.}",

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Implementation of Terahertz High-Pass Filters Based on All-Metal Microstructures using Deep X-ray Lithography. / Gentselev, A. N.; Kuznetsov, S. A.; Dultsev, F. N. и др.

В: Optoelectronics, Instrumentation and Data Processing, Том 55, № 2, 01.03.2019, стр. 115-125.

Результат исследования: Научные публикации в периодических изданиях › статья › рецензирование

TY - JOUR

T1 - Implementation of Terahertz High-Pass Filters Based on All-Metal Microstructures using Deep X-ray Lithography

AU - Gentselev, A. N.

AU - Kuznetsov, S. A.

AU - Dultsev, F. N.

AU - Goldenberg, B. G.

AU - Zelinsky, A. G.

AU - Kondratyev, V. I.

AU - Tanygina, D. S.

PY - 2019/3/1

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N2 - A method for fabricating high-pass terahertz quasi-optical filters in the form of thick (up to 1 mm in thickness) self-bearing copper microstructures of subwavelength topology is described. This method is based on forming a high-aspect-ratio mask of SU-8 resist on a silicon wafer via deep X-ray lithography through a tungsten X-ray mask followed by electroplating a copper layer through the resistive mask. An example of a 212-µm thick structure with a cutoff frequency of 0.42 THz having the geometry of hexagon-shaped through-holes arranged on a triangular lattice is considered. The results of broadband THz characterization and electromagnetic analysis of the structure fabricated are presented.

AB - A method for fabricating high-pass terahertz quasi-optical filters in the form of thick (up to 1 mm in thickness) self-bearing copper microstructures of subwavelength topology is described. This method is based on forming a high-aspect-ratio mask of SU-8 resist on a silicon wafer via deep X-ray lithography through a tungsten X-ray mask followed by electroplating a copper layer through the resistive mask. An example of a 212-µm thick structure with a cutoff frequency of 0.42 THz having the geometry of hexagon-shaped through-holes arranged on a triangular lattice is considered. The results of broadband THz characterization and electromagnetic analysis of the structure fabricated are presented.

KW - deep X-ray lithography

KW - LIGA technology

KW - microstructures

KW - quasi-optical filters

KW - terahertz range

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KW - TUNGSTEN

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