Impact of Ultrathin Pb Films on the Topological Surface and Quantum-Well States of Bi2Se3 and Sb2Te3 Topological Insulators

Yu A. Surnin, I. I. Klimovskikh, D. M. Sostina, K. A. Kokh, O. E. Tereshchenko, A. M. Shikin

Результат исследования: Научные публикации в периодических изданияхстатьярецензирование

2 Цитирования (Scopus)


The effect of an ultrathin Pb film deposited on the surface of Bi2Se3 and Sb2Te3 compounds on the electronic state structure of topological insulators is studied experimentally by the angle-resolved photoemission spectroscopy (ARPES) technique. The following features are revealed: formation of two-dimensional quantum-well states in the near-surface region, an increase in the binding energy of the Dirac cone and the core levels, and a simultaneous electronic states intensity redistribution in the system in photoemission spectra. The results obtained show that topological states may coexist at the interface between studied materials and a superconductor, which seems to be promising for application in quantum computers.

Язык оригиналаанглийский
Страницы (с-по)535-540
Число страниц6
ЖурналJournal of Experimental and Theoretical Physics
Номер выпуска4
СостояниеОпубликовано - 1 апр 2018


Подробные сведения о темах исследования «Impact of Ultrathin Pb Films on the Topological Surface and Quantum-Well States of Bi<sub>2</sub>Se<sub>3</sub> and Sb<sub>2</sub>Te<sub>3</sub> Topological Insulators». Вместе они формируют уникальный семантический отпечаток (fingerprint).