Impact of oxygen vacancy on the ferroelectric properties of lanthanum-doped hafnium oxide

Damir R. Islamov, Timur M. Zalyalov, Oleg M. Orlov, Vladimir A. Gritsenko, Gennady Ya Krasnikov

Результат исследования: Научные публикации в периодических изданияхстатьярецензирование

Аннотация

The discovery of ferroelectric properties in hafnium oxide has brought back the interest in the ferroelectric non-volatile memory as a possible alternative for low power consumption electronic memories. As far as real hafnium oxide-based materials have defects like oxygen vacancies, their presence might affect the ferroelectric properties due to oxygen atom movements during repolarizationprocesses. In this work, the transport experiments are combined with the modeling to study evolution of the oxygen vacancy concentration during the endurance and to determine the optimal defect density for a higher residual polarization in lanthanum-doped hafnium oxide.

Язык оригиналаанглийский
Номер статьи162901
ЖурналApplied Physics Letters
Том117
Номер выпуска16
DOI
СостояниеОпубликовано - 19 окт 2020

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