Аннотация
One particular application of amorphous silicon oxide (SiO2), a material crucial for silicon device technology and design, is as a flash memory tunnel dielectric. The breakdown field of SiO2 exceeds 107 V cmÿ1. Strong electric fields in SiO2 give rise to phenomena that do not occur in crystalline semicon-ductors. In relatively weak electric fields (104ÿ106 Vcmÿ1), the electron distribution function is determined by the scattering of electrons on longitudinal optical phonons. In high fields (in excess of 106 V cmÿ1), the distribution function is determined by electron-acoustic phonon scattering.
Язык оригинала | английский |
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Страницы (с-по) | 902-910 |
Число страниц | 9 |
Журнал | Physics-Uspekhi |
Том | 60 |
Номер выпуска | 9 |
DOI | |
Состояние | Опубликовано - сент. 2017 |