High-Temperature PIN Diodes Based on Amorphous Hydrogenated Silicon-Carbon Alloys and Boron-Doped Diamond Thin Films

The Ha Stuchlikova; Jiri Stuchlik; Zdenek Remes; Andrew Taylor; Vincent Mortet; Petr Ashcheulov; Ivan Gregora; Grigoriy Krivyakin; Vladimir Volodin

doi:10.1002/pssb.201900247

High-Temperature PIN Diodes Based on Amorphous Hydrogenated Silicon-Carbon Alloys and Boron-Doped Diamond Thin Films

The Ha Stuchlikova, Jiri Stuchlik, Zdenek Remes, Andrew Taylor, Vincent Mortet, Petr Ashcheulov, Ivan Gregora, Grigoriy Krivyakin, Vladimir Volodin

Результат исследования: Научные публикации в периодических изданиях › статья › рецензирование

Аннотация

Amorphous SiC:H (a-SiC:H) diode structures with different ratios of Si:C are deposited on transparent conductive boron-doped diamond-coated fused silica substrates by plasma-enhanced chemical vapor deposition. The boron-doped diamond thin films have been deposited at temperature 720 °C on the fused silica substrates with a Ti grid used to enhance electrical conductivity. The thin-film structures based on P-type, Intrinsic and N-type a-SiC:H thin films, shortly a-SiC:H PIN diodes, are characterized by current–voltage measurements under solar simulator illumination. For comparison, the same PIN structures are deposited on fluorine-doped tin oxide. Before deposition of the diode structures, the surface morphology is studied by scanning electron microscopy, and undoped layers deposited on the quartz substrates are characterized by temperature-resolved electrical resistivity, optical absorptance, Raman spectroscopy, and photoluminescence.

Язык оригинала	английский
Номер статьи	1900247
Число страниц	6
Журнал	Physica Status Solidi (B) Basic Research
Том	257
Номер выпуска	6
DOI	https://doi.org/10.1002/pssb.201900247
Состояние	Опубликовано - 1 июн 2020

Доступ к документу

10.1002/pssb.201900247

Link to publication in Scopus

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title = "High-Temperature PIN Diodes Based on Amorphous Hydrogenated Silicon-Carbon Alloys and Boron-Doped Diamond Thin Films",

abstract = "Amorphous SiC:H (a-SiC:H) diode structures with different ratios of Si:C are deposited on transparent conductive boron-doped diamond-coated fused silica substrates by plasma-enhanced chemical vapor deposition. The boron-doped diamond thin films have been deposited at temperature 720 °C on the fused silica substrates with a Ti grid used to enhance electrical conductivity. The thin-film structures based on P-type, Intrinsic and N-type a-SiC:H thin films, shortly a-SiC:H PIN diodes, are characterized by current–voltage measurements under solar simulator illumination. For comparison, the same PIN structures are deposited on fluorine-doped tin oxide. Before deposition of the diode structures, the surface morphology is studied by scanning electron microscopy, and undoped layers deposited on the quartz substrates are characterized by temperature-resolved electrical resistivity, optical absorptance, Raman spectroscopy, and photoluminescence.",

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author = "Stuchlikova, {The Ha} and Jiri Stuchlik and Zdenek Remes and Andrew Taylor and Vincent Mortet and Petr Ashcheulov and Ivan Gregora and Grigoriy Krivyakin and Vladimir Volodin",

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High-Temperature PIN Diodes Based on Amorphous Hydrogenated Silicon-Carbon Alloys and Boron-Doped Diamond Thin Films. / Stuchlikova, The Ha; Stuchlik, Jiri; Remes, Zdenek; Taylor, Andrew; Mortet, Vincent; Ashcheulov, Petr; Gregora, Ivan; Krivyakin, Grigoriy ; Volodin, Vladimir.

В: Physica Status Solidi (B) Basic Research, Том 257, № 6, 1900247, 01.06.2020.

Результат исследования: Научные публикации в периодических изданиях › статья › рецензирование

TY - JOUR

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AU - Stuchlikova, The Ha

AU - Stuchlik, Jiri

AU - Remes, Zdenek

AU - Taylor, Andrew

AU - Mortet, Vincent

AU - Ashcheulov, Petr

AU - Gregora, Ivan

AU - Krivyakin, Grigoriy

AU - Volodin, Vladimir

PY - 2020/6/1

Y1 - 2020/6/1

N2 - Amorphous SiC:H (a-SiC:H) diode structures with different ratios of Si:C are deposited on transparent conductive boron-doped diamond-coated fused silica substrates by plasma-enhanced chemical vapor deposition. The boron-doped diamond thin films have been deposited at temperature 720 °C on the fused silica substrates with a Ti grid used to enhance electrical conductivity. The thin-film structures based on P-type, Intrinsic and N-type a-SiC:H thin films, shortly a-SiC:H PIN diodes, are characterized by current–voltage measurements under solar simulator illumination. For comparison, the same PIN structures are deposited on fluorine-doped tin oxide. Before deposition of the diode structures, the surface morphology is studied by scanning electron microscopy, and undoped layers deposited on the quartz substrates are characterized by temperature-resolved electrical resistivity, optical absorptance, Raman spectroscopy, and photoluminescence.

AB - Amorphous SiC:H (a-SiC:H) diode structures with different ratios of Si:C are deposited on transparent conductive boron-doped diamond-coated fused silica substrates by plasma-enhanced chemical vapor deposition. The boron-doped diamond thin films have been deposited at temperature 720 °C on the fused silica substrates with a Ti grid used to enhance electrical conductivity. The thin-film structures based on P-type, Intrinsic and N-type a-SiC:H thin films, shortly a-SiC:H PIN diodes, are characterized by current–voltage measurements under solar simulator illumination. For comparison, the same PIN structures are deposited on fluorine-doped tin oxide. Before deposition of the diode structures, the surface morphology is studied by scanning electron microscopy, and undoped layers deposited on the quartz substrates are characterized by temperature-resolved electrical resistivity, optical absorptance, Raman spectroscopy, and photoluminescence.

KW - a-SiC:H

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KW - fluorine-doped tin oxide

KW - I–V characteristics

KW - PIN diodes

KW - DENSITY

KW - PHOTOLUMINESCENCE

KW - CARBIDE

KW - H

KW - GAP STATES

KW - I-V characteristics

KW - a-SiC

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