High-Power Microwave Photodiodes Based on MBE-Grown InAlAs/InGaAs Heterostructures

K. S. Zhuravlev; A. M. Gilinskii; I. B. Chistokhin; N. A. Valisheva; D. V. Dmitriev; A. I. Toropov; M. S. Aksenov; A. L. Chizh; K. B. Mikitchuk

doi:10.1134/S1063784221070185

High-Power Microwave Photodiodes Based on MBE-Grown InAlAs/InGaAs Heterostructures

K. S. Zhuravlev, A. M. Gilinskii, I. B. Chistokhin, N. A. Valisheva, D. V. Dmitriev, A. I. Toropov, M. S. Aksenov, A. L. Chizh, K. B. Mikitchuk

Результат исследования: Научные публикации в периодических изданиях › статья › рецензирование

Аннотация

The design and fabrication technology of high-power Schottky-barrier microwave mesa photodiodes from 10 to 40 μm in diameter back-illuminated through the substrate are described. The diodes were made on MBE-grown InAlAs/InGaAs/InP heterostructures. The operating frequency of photodiodes 10 μm in diameter has been found to be 40 GHz, and the maximal microwave output at 20 GHz for photodiodes 15 μm in diameter have been found to reach 58 mW. The coefficient of amplitude-to-phase conversion has been determined to be 1.5 rad/W. This value outperforms the available literature data and makes the given design of photodiodes promising for systems of analog microwave signal generation and transmission, which are very sensitive to phase noise.

Язык оригинала	английский
Номер статьи	34
Страницы (с-по)	1072-1077
Число страниц	6
Журнал	Technical Physics
Том	66
Номер выпуска	9
DOI	https://doi.org/10.1134/S1063784221070185
Состояние	Опубликовано - сент. 2021

Предметные области OECD FOS+WOS

1.03 ФИЗИЧЕСКИЕ НАУКИ И АСТРОНОМИЯ

ГРНТИ

29 ФИЗИКА

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10.1134/S1063784221070185

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title = "High-Power Microwave Photodiodes Based on MBE-Grown InAlAs/InGaAs Heterostructures",

abstract = "The design and fabrication technology of high-power Schottky-barrier microwave mesa photodiodes from 10 to 40 μm in diameter back-illuminated through the substrate are described. The diodes were made on MBE-grown InAlAs/InGaAs/InP heterostructures. The operating frequency of photodiodes 10 μm in diameter has been found to be 40 GHz, and the maximal microwave output at 20 GHz for photodiodes 15 μm in diameter have been found to reach 58 mW. The coefficient of amplitude-to-phase conversion has been determined to be 1.5 rad/W. This value outperforms the available literature data and makes the given design of photodiodes promising for systems of analog microwave signal generation and transmission, which are very sensitive to phase noise.",

author = "Zhuravlev, {K. S.} and Gilinskii, {A. M.} and Chistokhin, {I. B.} and Valisheva, {N. A.} and Dmitriev, {D. V.} and Toropov, {A. I.} and Aksenov, {M. S.} and Chizh, {A. L.} and Mikitchuk, {K. B.}",

note = "Funding Information: This study was supported by the Russian Science Foundation (grant no. 19-72- 30023) and the Russian Foundation for Basic Research (grant no. 20-52-26013). The layout control of the structures and measurements of the low-frequency characteristics of photodiodes were performed in the Nanostructures Center for Collective Use at the Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences. Publisher Copyright: {\textcopyright} 2021, Pleiades Publishing, Ltd.",

year = "2021",

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doi = "10.1134/S1063784221070185",

language = "English",

volume = "66",

pages = "1072--1077",

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number = "9",

}

High-Power Microwave Photodiodes Based on MBE-Grown InAlAs/InGaAs Heterostructures. / Zhuravlev, K. S.; Gilinskii, A. M.; Chistokhin, I. B. и др.

В: Technical Physics, Том 66, № 9, 34, 09.2021, стр. 1072-1077.

Результат исследования: Научные публикации в периодических изданиях › статья › рецензирование

TY - JOUR

T1 - High-Power Microwave Photodiodes Based on MBE-Grown InAlAs/InGaAs Heterostructures

AU - Zhuravlev, K. S.

AU - Gilinskii, A. M.

AU - Chistokhin, I. B.

AU - Valisheva, N. A.

AU - Dmitriev, D. V.

AU - Toropov, A. I.

AU - Aksenov, M. S.

AU - Chizh, A. L.

AU - Mikitchuk, K. B.

N1 - Funding Information: This study was supported by the Russian Science Foundation (grant no. 19-72- 30023) and the Russian Foundation for Basic Research (grant no. 20-52-26013). The layout control of the structures and measurements of the low-frequency characteristics of photodiodes were performed in the Nanostructures Center for Collective Use at the Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences. Publisher Copyright: © 2021, Pleiades Publishing, Ltd.

PY - 2021/9

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N2 - The design and fabrication technology of high-power Schottky-barrier microwave mesa photodiodes from 10 to 40 μm in diameter back-illuminated through the substrate are described. The diodes were made on MBE-grown InAlAs/InGaAs/InP heterostructures. The operating frequency of photodiodes 10 μm in diameter has been found to be 40 GHz, and the maximal microwave output at 20 GHz for photodiodes 15 μm in diameter have been found to reach 58 mW. The coefficient of amplitude-to-phase conversion has been determined to be 1.5 rad/W. This value outperforms the available literature data and makes the given design of photodiodes promising for systems of analog microwave signal generation and transmission, which are very sensitive to phase noise.

AB - The design and fabrication technology of high-power Schottky-barrier microwave mesa photodiodes from 10 to 40 μm in diameter back-illuminated through the substrate are described. The diodes were made on MBE-grown InAlAs/InGaAs/InP heterostructures. The operating frequency of photodiodes 10 μm in diameter has been found to be 40 GHz, and the maximal microwave output at 20 GHz for photodiodes 15 μm in diameter have been found to reach 58 mW. The coefficient of amplitude-to-phase conversion has been determined to be 1.5 rad/W. This value outperforms the available literature data and makes the given design of photodiodes promising for systems of analog microwave signal generation and transmission, which are very sensitive to phase noise.

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