Аннотация
Abstract: Design and manufacturing technology of high-power microwave Schottky photodiodes with microstripe leads have been developed based on an InAlAs/InGaAs heterostructure. The operating frequency of photodiodes with a mesa diameter of 15 μm is above 25 GHz and a maximum output microwave power at 20 GHz exceeds 50 mW, which allows these photodiodes to be employed in analog fiber-optic microwave signal transmission lines, as well as for the microwave signal generation and processing by optical methods in remote sensing and measuring microwave technology.
Язык оригинала | английский |
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Страницы (с-по) | 739-741 |
Число страниц | 3 |
Журнал | Technical Physics Letters |
Том | 45 |
Номер выпуска | 7 |
DOI | |
Состояние | Опубликовано - 1 июл 2019 |