High-Power High-Speed Schottky Photodiodes for Analog Fiber-Optic Microwave Signal Transmission Lines

A. L. Chizh; K. B. Mikitchuk; K. S. Zhuravlev; D. V. Dmitriev; A. I. Toropov; N. A. Valisheva; M. S. Aksenov; A. M. Gilinsky; I. B. Chistokhin

doi:10.1134/S1063785019070204

High-Power High-Speed Schottky Photodiodes for Analog Fiber-Optic Microwave Signal Transmission Lines

A. L. Chizh, K. B. Mikitchuk, K. S. Zhuravlev, D. V. Dmitriev, A. I. Toropov, N. A. Valisheva, M. S. Aksenov, A. M. Gilinsky, I. B. Chistokhin

Лаборатория полупроводниковых и диэлектрических материалов ФФ

Результат исследования: Научные публикации в периодических изданиях › статья › рецензирование

3 Цитирования (Scopus)

Аннотация

Abstract: Design and manufacturing technology of high-power microwave Schottky photodiodes with microstripe leads have been developed based on an InAlAs/InGaAs heterostructure. The operating frequency of photodiodes with a mesa diameter of 15 μm is above 25 GHz and a maximum output microwave power at 20 GHz exceeds 50 mW, which allows these photodiodes to be employed in analog fiber-optic microwave signal transmission lines, as well as for the microwave signal generation and processing by optical methods in remote sensing and measuring microwave technology.

Язык оригинала	английский
Страницы (с-по)	739-741
Число страниц	3
Журнал	Technical Physics Letters
Том	45
Номер выпуска	7
DOI	https://doi.org/10.1134/S1063785019070204
Состояние	Опубликовано - 1 июл 2019

Доступ к документу

10.1134/S1063785019070204

Link to publication in Scopus

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Цитировать

@article{5446b2451fd249cfab45e8c6e3d1caf1,

title = "High-Power High-Speed Schottky Photodiodes for Analog Fiber-Optic Microwave Signal Transmission Lines",

abstract = "Abstract: Design and manufacturing technology of high-power microwave Schottky photodiodes with microstripe leads have been developed based on an InAlAs/InGaAs heterostructure. The operating frequency of photodiodes with a mesa diameter of 15 μm is above 25 GHz and a maximum output microwave power at 20 GHz exceeds 50 mW, which allows these photodiodes to be employed in analog fiber-optic microwave signal transmission lines, as well as for the microwave signal generation and processing by optical methods in remote sensing and measuring microwave technology.",

keywords = "high-power microwave photodiodes, InAlAs/InGaAs heterostructures, Schottky barrier, InGaAs heterostructures, InAlAs",

author = "Chizh, {A. L.} and Mikitchuk, {K. B.} and Zhuravlev, {K. S.} and Dmitriev, {D. V.} and Toropov, {A. I.} and Valisheva, {N. A.} and Aksenov, {M. S.} and Gilinsky, {A. M.} and Chistokhin, {I. B.}",

year = "2019",

month = jul,

day = "1",

doi = "10.1134/S1063785019070204",

language = "English",

volume = "45",

pages = "739--741",

journal = "Technical Physics Letters",

issn = "1063-7850",

publisher = "PLEIADES PUBLISHING INC",

number = "7",

}

High-Power High-Speed Schottky Photodiodes for Analog Fiber-Optic Microwave Signal Transmission Lines. / Chizh, A. L.; Mikitchuk, K. B.; Zhuravlev, K. S.; Dmitriev, D. V.; Toropov, A. I.; Valisheva, N. A.; Aksenov, M. S.; Gilinsky, A. M.; Chistokhin, I. B.

В: Technical Physics Letters, Том 45, № 7, 01.07.2019, стр. 739-741.

Результат исследования: Научные публикации в периодических изданиях › статья › рецензирование

TY - JOUR

T1 - High-Power High-Speed Schottky Photodiodes for Analog Fiber-Optic Microwave Signal Transmission Lines

AU - Chizh, A. L.

AU - Mikitchuk, K. B.

AU - Zhuravlev, K. S.

AU - Dmitriev, D. V.

AU - Toropov, A. I.

AU - Valisheva, N. A.

AU - Aksenov, M. S.

AU - Gilinsky, A. M.

AU - Chistokhin, I. B.

PY - 2019/7/1

Y1 - 2019/7/1

N2 - Abstract: Design and manufacturing technology of high-power microwave Schottky photodiodes with microstripe leads have been developed based on an InAlAs/InGaAs heterostructure. The operating frequency of photodiodes with a mesa diameter of 15 μm is above 25 GHz and a maximum output microwave power at 20 GHz exceeds 50 mW, which allows these photodiodes to be employed in analog fiber-optic microwave signal transmission lines, as well as for the microwave signal generation and processing by optical methods in remote sensing and measuring microwave technology.

AB - Abstract: Design and manufacturing technology of high-power microwave Schottky photodiodes with microstripe leads have been developed based on an InAlAs/InGaAs heterostructure. The operating frequency of photodiodes with a mesa diameter of 15 μm is above 25 GHz and a maximum output microwave power at 20 GHz exceeds 50 mW, which allows these photodiodes to be employed in analog fiber-optic microwave signal transmission lines, as well as for the microwave signal generation and processing by optical methods in remote sensing and measuring microwave technology.

KW - high-power microwave photodiodes

KW - InAlAs/InGaAs heterostructures

KW - Schottky barrier

KW - InGaAs heterostructures

KW - InAlAs

UR - http://www.scopus.com/inward/record.url?scp=85071558222&partnerID=8YFLogxK

U2 - 10.1134/S1063785019070204

DO - 10.1134/S1063785019070204

M3 - Article

AN - SCOPUS:85071558222

VL - 45

SP - 739

EP - 741

JO - Technical Physics Letters

JF - Technical Physics Letters

SN - 1063-7850

IS - 7

ER -