HgCdTe-based heterostructures for terahertz photonics

S. Ruffenach, A. Kadykov, V. V. Rumyantsev, J. Torres, D. Coquillat, D. But, S. S. Krishtopenko, C. Consejo, W. Knap, S. Winnerl, M. Helm, M. A. Fadeev, N. N. Mikhailov, S. A. Dvoretskii, V. I. Gavrilenko, S. V. Morozov, F. Teppe

Результат исследования: Научные публикации в периодических изданияхстатьярецензирование

32 Цитирования (Scopus)


Due to their specific physical properties, HgCdTe-based heterostructures are expected to play an important role in terahertz photonic systems. Here, focusing on gated devices presenting inverted band ordering, we evidence an enhancement of the terahertz photoconductive response close to the charge neutrality point and at the magnetic field driven topological phase transition. We also show the ability of these heterostructures to be used as terahertz imagers. Regarding terahertz emitters, we present results on stimulated emission of HgCdTe heterostructures in their conventional semiconductor state above 30 THz, discussing the physical mechanisms involved and promising routes towards the 5-15 THz frequency domain.

Язык оригиналаанглийский
Номер статьи035503
Число страниц8
ЖурналAPL Materials
Номер выпуска3
СостояниеОпубликовано - 1 мар. 2017


Подробные сведения о темах исследования «HgCdTe-based heterostructures for terahertz photonics». Вместе они формируют уникальный семантический отпечаток (fingerprint).