Hafnia and alumina stacks as UTBOXs in silicon-on insulator

V. P. Popov, V. A. Antonov, A. K. Gutakovskiy, I. E. Tyschenko, V. I. Vdovin, A. V. Miakonkikh, K. V. Rudenko

Результат исследования: Научные публикации в периодических изданияхстатья


PEALD-grown hafnia and alumina buried oxide (BOX) stacks in silicon-on-insulator (SOI) structures were produced and characterized by XTEM and pseudo-MOSFET techniques. The ferroelectric phases of hafnia were observed by XTEM and SAED. It was shown that the minimal interface states density (IFS) < 1012 cm−2 and the maximal one with a memory window MW ~1 V could be obtained by the right choice of high-k dielectric layer sequence in BOX stack and thermal processing.

Язык оригиналаанглийский
Номер статьи107734
Число страниц7
ЖурналSolid-State Electronics
СостояниеОпубликовано - июн 2020

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    Popov, V. P., Antonov, V. A., Gutakovskiy, A. K., Tyschenko, I. E., Vdovin, V. I., Miakonkikh, A. V., & Rudenko, K. V. (2020). Hafnia and alumina stacks as UTBOXs in silicon-on insulator. Solid-State Electronics, 168, [107734]. https://doi.org/10.1016/j.sse.2019.107734