Hafnia and alumina stacks as UTBOXs in silicon-on insulator

V. P. Popov; V. A. Antonov; A. K. Gutakovskiy; I. E. Tyschenko; V. I. Vdovin; A. V. Miakonkikh; K. V. Rudenko

doi:10.1016/j.sse.2019.107734

Hafnia and alumina stacks as UTBOXs in silicon-on insulator

V. P. Popov, V. A. Antonov, A. K. Gutakovskiy, I. E. Tyschenko, V. I. Vdovin, A. V. Miakonkikh, K. V. Rudenko

Лаборатория наносверхпроводимости ФФ

Результат исследования: Научные публикации в периодических изданиях › статья › рецензирование

2 Цитирования (Scopus)

Аннотация

PEALD-grown hafnia and alumina buried oxide (BOX) stacks in silicon-on-insulator (SOI) structures were produced and characterized by XTEM and pseudo-MOSFET techniques. The ferroelectric phases of hafnia were observed by XTEM and SAED. It was shown that the minimal interface states density (IFS) < 10¹² cm⁻² and the maximal one with a memory window MW ~1 V could be obtained by the right choice of high-k dielectric layer sequence in BOX stack and thermal processing.

Язык оригинала	английский
Номер статьи	107734
Число страниц	7
Журнал	Solid-State Electronics
Том	168
DOI	https://doi.org/10.1016/j.sse.2019.107734
Состояние	Опубликовано - июн 2020

Доступ к документу

10.1016/j.sse.2019.107734

Link to publication in Scopus

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@article{b1750eaad26742abb82356cb3b2a1871,

title = "Hafnia and alumina stacks as UTBOXs in silicon-on insulator",

abstract = "PEALD-grown hafnia and alumina buried oxide (BOX) stacks in silicon-on-insulator (SOI) structures were produced and characterized by XTEM and pseudo-MOSFET techniques. The ferroelectric phases of hafnia were observed by XTEM and SAED. It was shown that the minimal interface states density (IFS) < 1012 cm−2 and the maximal one with a memory window MW ~1 V could be obtained by the right choice of high-k dielectric layer sequence in BOX stack and thermal processing.",

keywords = "Ferroelectric phase, Hafnia and alumina high-k BOX, Interface polarization, Interface states, SOI pseudo-MOSFETs, SOS",

author = "Popov, {V. P.} and Antonov, {V. A.} and Gutakovskiy, {A. K.} and Tyschenko, {I. E.} and Vdovin, {V. I.} and Miakonkikh, {A. V.} and Rudenko, {K. V.}",

year = "2020",

month = jun,

doi = "10.1016/j.sse.2019.107734",

language = "English",

volume = "168",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Ltd",

}

Hafnia and alumina stacks as UTBOXs in silicon-on insulator. / Popov, V. P.; Antonov, V. A.; Gutakovskiy, A. K.; Tyschenko, I. E.; Vdovin, V. I.; Miakonkikh, A. V.; Rudenko, K. V.

В: Solid-State Electronics, Том 168, 107734, 06.2020.

Результат исследования: Научные публикации в периодических изданиях › статья › рецензирование

TY - JOUR

T1 - Hafnia and alumina stacks as UTBOXs in silicon-on insulator

AU - Popov, V. P.

AU - Antonov, V. A.

AU - Gutakovskiy, A. K.

AU - Tyschenko, I. E.

AU - Vdovin, V. I.

AU - Miakonkikh, A. V.

AU - Rudenko, K. V.

PY - 2020/6

Y1 - 2020/6

N2 - PEALD-grown hafnia and alumina buried oxide (BOX) stacks in silicon-on-insulator (SOI) structures were produced and characterized by XTEM and pseudo-MOSFET techniques. The ferroelectric phases of hafnia were observed by XTEM and SAED. It was shown that the minimal interface states density (IFS) < 1012 cm−2 and the maximal one with a memory window MW ~1 V could be obtained by the right choice of high-k dielectric layer sequence in BOX stack and thermal processing.

AB - PEALD-grown hafnia and alumina buried oxide (BOX) stacks in silicon-on-insulator (SOI) structures were produced and characterized by XTEM and pseudo-MOSFET techniques. The ferroelectric phases of hafnia were observed by XTEM and SAED. It was shown that the minimal interface states density (IFS) < 1012 cm−2 and the maximal one with a memory window MW ~1 V could be obtained by the right choice of high-k dielectric layer sequence in BOX stack and thermal processing.

KW - Ferroelectric phase

KW - Hafnia and alumina high-k BOX

KW - Interface polarization

KW - Interface states

KW - SOI pseudo-MOSFETs

KW - SOS

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U2 - 10.1016/j.sse.2019.107734

DO - 10.1016/j.sse.2019.107734

M3 - Article

AN - SCOPUS:85076587576

VL - 168

JO - Solid-State Electronics

JF - Solid-State Electronics

SN - 0038-1101

M1 - 107734

ER -