Аннотация
PEALD-grown hafnia and alumina buried oxide (BOX) stacks in silicon-on-insulator (SOI) structures were produced and characterized by XTEM and pseudo-MOSFET techniques. The ferroelectric phases of hafnia were observed by XTEM and SAED. It was shown that the minimal interface states density (IFS) < 1012 cm−2 and the maximal one with a memory window MW ~1 V could be obtained by the right choice of high-k dielectric layer sequence in BOX stack and thermal processing.
Язык оригинала | английский |
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Номер статьи | 107734 |
Число страниц | 7 |
Журнал | Solid-State Electronics |
Том | 168 |
DOI | |
Состояние | Опубликовано - июн 2020 |