Hafnia and alumina stacks as UTBOXs in silicon-on insulator

V. P. Popov, V. A. Antonov, A. K. Gutakovskiy, I. E. Tyschenko, V. I. Vdovin, A. V. Miakonkikh, K. V. Rudenko

Результат исследования: Научные публикации в периодических изданияхстатьярецензирование

3 Цитирования (Scopus)


PEALD-grown hafnia and alumina buried oxide (BOX) stacks in silicon-on-insulator (SOI) structures were produced and characterized by XTEM and pseudo-MOSFET techniques. The ferroelectric phases of hafnia were observed by XTEM and SAED. It was shown that the minimal interface states density (IFS) < 1012 cm−2 and the maximal one with a memory window MW ~1 V could be obtained by the right choice of high-k dielectric layer sequence in BOX stack and thermal processing.

Язык оригиналаанглийский
Номер статьи107734
Число страниц7
ЖурналSolid-State Electronics
СостояниеОпубликовано - июн 2020


Подробные сведения о темах исследования «Hafnia and alumina stacks as UTBOXs in silicon-on insulator». Вместе они формируют уникальный семантический отпечаток (fingerprint).