Graphitization of a diamond surface upon high-dose ion bombardment

N. N. Andrianova; A. M. Borisov; V. A. Kazakov; E. S. Mashkova; Yu N. Palyanov; E. A. Pitirimova; V. P. Popov; R. N. Rizakhanov; S. K. Sigalaev

doi:10.3103/S1062873816020040

Graphitization of a diamond surface upon high-dose ion bombardment

N. N. Andrianova, A. M. Borisov, V. A. Kazakov, E. S. Mashkova, Yu N. Palyanov, E. A. Pitirimova, V. P. Popov, R. N. Rizakhanov, S. K. Sigalaev

Результат исследования: Научные публикации в периодических изданиях › статья › рецензирование

8 Цитирования (Scopus)

Аннотация

Results from structural and morphological studies, measurements of the sheet electrical resistance, and estimating resistivity ρ_m of a graphite-like conducting surface layer formed upon high-dose irradiation of the (111) face of a synthetic diamond with Ar⁺ ions at an energy of 30 keV and a target temperature of 400°C are presented. It is found that the orienting effect of the diamond lattice is visible in the suppression of the formation of graphite crystallites with axis c perpendicular to the surface. The thickness of the modified layer is 40–50 nm, and its sheet resistance is 0.5 kΩ/sq. Resistivity ρ_m = 20–25 μΩ m of the modified layer lies within the range of ρ values of graphite and glassy carbon materials.

Язык оригинала	английский
Страницы (с-по)	156-160
Число страниц	5
Журнал	Bulletin of the Russian Academy of Sciences: Physics
Том	80
Номер выпуска	2
DOI	https://doi.org/10.3103/S1062873816020040
Состояние	Опубликовано - 1 фев 2016
Опубликовано для внешнего пользования	Да

Доступ к документу

10.3103/S1062873816020040

Link to publication in Scopus

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abstract = "Results from structural and morphological studies, measurements of the sheet electrical resistance, and estimating resistivity ρm of a graphite-like conducting surface layer formed upon high-dose irradiation of the (111) face of a synthetic diamond with Ar+ ions at an energy of 30 keV and a target temperature of 400°C are presented. It is found that the orienting effect of the diamond lattice is visible in the suppression of the formation of graphite crystallites with axis c perpendicular to the surface. The thickness of the modified layer is 40–50 nm, and its sheet resistance is 0.5 kΩ/sq. Resistivity ρm = 20–25 μΩ m of the modified layer lies within the range of ρ values of graphite and glassy carbon materials.",

author = "Andrianova, {N. N.} and Borisov, {A. M.} and Kazakov, {V. A.} and Mashkova, {E. S.} and Palyanov, {Yu N.} and Pitirimova, {E. A.} and Popov, {V. P.} and Rizakhanov, {R. N.} and Sigalaev, {S. K.}",

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Graphitization of a diamond surface upon high-dose ion bombardment. / Andrianova, N. N.; Borisov, A. M.; Kazakov, V. A.; Mashkova, E. S.; Palyanov, Yu N.; Pitirimova, E. A.; Popov, V. P.; Rizakhanov, R. N.; Sigalaev, S. K.

В: Bulletin of the Russian Academy of Sciences: Physics, Том 80, № 2, 01.02.2016, стр. 156-160.

Результат исследования: Научные публикации в периодических изданиях › статья › рецензирование

TY - JOUR

T1 - Graphitization of a diamond surface upon high-dose ion bombardment

AU - Andrianova, N. N.

AU - Borisov, A. M.

AU - Kazakov, V. A.

AU - Mashkova, E. S.

AU - Palyanov, Yu N.

AU - Pitirimova, E. A.

AU - Popov, V. P.

AU - Rizakhanov, R. N.

AU - Sigalaev, S. K.

PY - 2016/2/1

Y1 - 2016/2/1

N2 - Results from structural and morphological studies, measurements of the sheet electrical resistance, and estimating resistivity ρm of a graphite-like conducting surface layer formed upon high-dose irradiation of the (111) face of a synthetic diamond with Ar+ ions at an energy of 30 keV and a target temperature of 400°C are presented. It is found that the orienting effect of the diamond lattice is visible in the suppression of the formation of graphite crystallites with axis c perpendicular to the surface. The thickness of the modified layer is 40–50 nm, and its sheet resistance is 0.5 kΩ/sq. Resistivity ρm = 20–25 μΩ m of the modified layer lies within the range of ρ values of graphite and glassy carbon materials.

AB - Results from structural and morphological studies, measurements of the sheet electrical resistance, and estimating resistivity ρm of a graphite-like conducting surface layer formed upon high-dose irradiation of the (111) face of a synthetic diamond with Ar+ ions at an energy of 30 keV and a target temperature of 400°C are presented. It is found that the orienting effect of the diamond lattice is visible in the suppression of the formation of graphite crystallites with axis c perpendicular to the surface. The thickness of the modified layer is 40–50 nm, and its sheet resistance is 0.5 kΩ/sq. Resistivity ρm = 20–25 μΩ m of the modified layer lies within the range of ρ values of graphite and glassy carbon materials.

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