Graphitization of a diamond surface upon high-dose ion bombardment

N. N. Andrianova, A. M. Borisov, V. A. Kazakov, E. S. Mashkova, Yu N. Palyanov, E. A. Pitirimova, V. P. Popov, R. N. Rizakhanov, S. K. Sigalaev

Результат исследования: Научные публикации в периодических изданияхстатьярецензирование

9 Цитирования (Scopus)


Results from structural and morphological studies, measurements of the sheet electrical resistance, and estimating resistivity ρm of a graphite-like conducting surface layer formed upon high-dose irradiation of the (111) face of a synthetic diamond with Ar+ ions at an energy of 30 keV and a target temperature of 400°C are presented. It is found that the orienting effect of the diamond lattice is visible in the suppression of the formation of graphite crystallites with axis c perpendicular to the surface. The thickness of the modified layer is 40–50 nm, and its sheet resistance is 0.5 kΩ/sq. Resistivity ρm = 20–25 μΩ m of the modified layer lies within the range of ρ values of graphite and glassy carbon materials.

Язык оригиналаанглийский
Страницы (с-по)156-160
Число страниц5
ЖурналBulletin of the Russian Academy of Sciences: Physics
Номер выпуска2
СостояниеОпубликовано - 1 фев 2016
Опубликовано для внешнего пользованияДа


Подробные сведения о темах исследования «Graphitization of a diamond surface upon high-dose ion bombardment». Вместе они формируют уникальный семантический отпечаток (fingerprint).