Gate control of the spin mobility through the modification of the spin-orbit interaction in two-dimensional systems

M. Luengo-Kovac, F. C.D. Moraes, G. J. Ferreira, A. S.L. Ribeiro, G. M. Gusev, A. K. Bakarov, V. Sih, F. G.G. Hernandez

Результат исследования: Научные публикации в периодических изданияхстатья

6 Цитирования (Scopus)

Аннотация

Spin drag measurements were performed in a two-dimensional electron system set close to the crossed spin helix regime and coupled by strong intersubband scattering. In a sample with an uncommon combination of long spin lifetime and high charge mobility, the drift transport allows us to determine the spin-orbit field and the spin mobility anisotropies. We used a random walk model to describe the system dynamics and found excellent agreement for the Rashba and Dresselhaus couplings. The proposed two-subband system displays a large tuning lever arm for the Rashba constant with gate voltage, which provides a new path towards a spin transistor. Furthermore, the data show large spin mobility controlled by the spin-orbit constants setting the field along the direction perpendicular to the drift velocity. This work directly reveals the resistance experienced in the transport of a spin-polarized packet as a function of the strength of anisotropic spin-orbit fields.

Язык оригиналаанглийский
Номер статьи245315
Число страниц6
ЖурналPhysical Review B
Том95
Номер выпуска24
DOI
СостояниеОпубликовано - 30 июн 2017

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  • Цитировать

    Luengo-Kovac, M., Moraes, F. C. D., Ferreira, G. J., Ribeiro, A. S. L., Gusev, G. M., Bakarov, A. K., Sih, V., & Hernandez, F. G. G. (2017). Gate control of the spin mobility through the modification of the spin-orbit interaction in two-dimensional systems. Physical Review B, 95(24), [245315]. https://doi.org/10.1103/PhysRevB.95.245315