GaSb nanocrystals grown by solid phase epitaxy and embedded into monocrystalline silicon

E. A. Chusovitin, D. L. Goroshko, S. A. Dotsenko, S. V. Chusovitina, A. V. Shevlyagin, N. G. Galkin, A. K. Gutakovskii

Результат исследования: Научные публикации в периодических изданияхстатья

5 Цитирования (Scopus)

Аннотация

A double-layer heterostructure with embedded into single-crystal silicon matrix nanocrystals (NCs) of gallium antimonide (GaSb) was grown. The NCs were formed by solid phase epitaxy method using 1.6-nm-thick Ga-Sb stoichiometric mixture and annealing at a temperature range of 200–500 °C. The embedded NCs have a concentration of about 5.4 × 1010 cm− 2, a mean height of 8.6 nm and a mean lateral dimension of 19.2 nm. A stress induced inside the NCs owing to lattice mismatch between Si and GaSb was fully relaxed by edge dislocations at Si/GaSb interface. All the NCs have identical epitaxial relationship: GaSb(111)||Si(111), GaSb11−0 ||Si11−0.

Язык оригиналаанглийский
Страницы (с-по)83-86
Число страниц4
ЖурналScripta Materialia
Том136
DOI
СостояниеОпубликовано - 15 июл 2017

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Chusovitin, E. A., Goroshko, D. L., Dotsenko, S. A., Chusovitina, S. V., Shevlyagin, A. V., Galkin, N. G., & Gutakovskii, A. K. (2017). GaSb nanocrystals grown by solid phase epitaxy and embedded into monocrystalline silicon. Scripta Materialia, 136, 83-86. https://doi.org/10.1016/j.scriptamat.2017.04.004