GaAs/GaP Quantum-Well Heterostructures Grown on Si Substrates

D. S. Abramkin; M. O. Petrushkov; M. A. Putyato; B. R. Semyagin; E. A. Emelyanov; V. V. Preobrazhenskii; A. K. Gutakovskii; T. S. Shamirzaev

doi:10.1134/S1063782619090021

GaAs/GaP Quantum-Well Heterostructures Grown on Si Substrates

D. S. Abramkin, M. O. Petrushkov, M. A. Putyato, B. R. Semyagin, E. A. Emelyanov, V. V. Preobrazhenskii, A. K. Gutakovskii, T. S. Shamirzaev

Результат исследования: Научные публикации в периодических изданиях › статья › рецензирование

1 Цитирования (Scopus)

Аннотация

Molecular-beam epitaxy is used to produce GaP/Si hybrid substrates that allow the growth of highly efficient light-emitting heterostructures with GaAs/GaP quantum wells. Despite the relatively high concentration of nonradiative-recombination centers in GaP/Si layers, GaAs/GaP quantum-well heterostructures grown on GaP/Si hybrid substrates are highly competitive in terms of efficiency and temperature stability of luminescence to similar heterostructures grown on lattice-matched GaP substrates.

Язык оригинала	английский
Страницы (с-по)	1143-1147
Число страниц	5
Журнал	Semiconductors
Том	53
Номер выпуска	9
DOI	https://doi.org/10.1134/S1063782619090021
Состояние	Опубликовано - 1 сент. 2019

Доступ к документу

10.1134/S1063782619090021

Другие файлы и ссылки

Link to publication in Scopus

Цитировать

@article{06e7a4ccf11b4026881b778e3a690ba1,

title = "GaAs/GaP Quantum-Well Heterostructures Grown on Si Substrates",

abstract = "Molecular-beam epitaxy is used to produce GaP/Si hybrid substrates that allow the growth of highly efficient light-emitting heterostructures with GaAs/GaP quantum wells. Despite the relatively high concentration of nonradiative-recombination centers in GaP/Si layers, GaAs/GaP quantum-well heterostructures grown on GaP/Si hybrid substrates are highly competitive in terms of efficiency and temperature stability of luminescence to similar heterostructures grown on lattice-matched GaP substrates.",

keywords = "GaP on Si, hybrid substrates, molecular-beam epitaxy, photoluminescence, quantum wells, SEMICONDUCTORS, SILICON, GAP",

author = "Abramkin, {D. S.} and Petrushkov, {M. O.} and Putyato, {M. A.} and Semyagin, {B. R.} and Emelyanov, {E. A.} and Preobrazhenskii, {V. V.} and Gutakovskii, {A. K.} and Shamirzaev, {T. S.}",

year = "2019",

month = sep,

day = "1",

doi = "10.1134/S1063782619090021",

language = "English",

volume = "53",

pages = "1143--1147",

journal = "Semiconductors",

issn = "1063-7826",

publisher = "PLEIADES PUBLISHING INC",

number = "9",

}

GaAs/GaP Quantum-Well Heterostructures Grown on Si Substrates. / Abramkin, D. S.; Petrushkov, M. O.; Putyato, M. A. и др.

В: Semiconductors, Том 53, № 9, 01.09.2019, стр. 1143-1147.

Результат исследования: Научные публикации в периодических изданиях › статья › рецензирование

TY - JOUR

T1 - GaAs/GaP Quantum-Well Heterostructures Grown on Si Substrates

AU - Abramkin, D. S.

AU - Petrushkov, M. O.

AU - Putyato, M. A.

AU - Semyagin, B. R.

AU - Emelyanov, E. A.

AU - Preobrazhenskii, V. V.

AU - Gutakovskii, A. K.

AU - Shamirzaev, T. S.

PY - 2019/9/1

Y1 - 2019/9/1

N2 - Molecular-beam epitaxy is used to produce GaP/Si hybrid substrates that allow the growth of highly efficient light-emitting heterostructures with GaAs/GaP quantum wells. Despite the relatively high concentration of nonradiative-recombination centers in GaP/Si layers, GaAs/GaP quantum-well heterostructures grown on GaP/Si hybrid substrates are highly competitive in terms of efficiency and temperature stability of luminescence to similar heterostructures grown on lattice-matched GaP substrates.

AB - Molecular-beam epitaxy is used to produce GaP/Si hybrid substrates that allow the growth of highly efficient light-emitting heterostructures with GaAs/GaP quantum wells. Despite the relatively high concentration of nonradiative-recombination centers in GaP/Si layers, GaAs/GaP quantum-well heterostructures grown on GaP/Si hybrid substrates are highly competitive in terms of efficiency and temperature stability of luminescence to similar heterostructures grown on lattice-matched GaP substrates.

KW - GaP on Si

KW - hybrid substrates

KW - molecular-beam epitaxy

KW - photoluminescence

KW - quantum wells

KW - SEMICONDUCTORS

KW - SILICON

KW - GAP

UR - http://www.scopus.com/inward/record.url?scp=85071879647&partnerID=8YFLogxK

U2 - 10.1134/S1063782619090021

DO - 10.1134/S1063782619090021

M3 - Article

AN - SCOPUS:85071879647

VL - 53

SP - 1143

EP - 1147

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 9

ER -

GaAs/GaP Quantum-Well Heterostructures Grown on Si Substrates

Аннотация

Доступ к документу

Другие файлы и ссылки

Fingerprint

Цитировать