Forming the GaN Nanocrystals on the Graphene-Like g-AlN and g-Si3N3 Surface

D. S. Milakhin, T. V. Malin, V. G. Mansurov, Yu. G. Galitsyn, A. S. Kozhukhov, I. A. Aleksandrov, N. V. Rzheutski, E. V. Lebiadok, E. A. Razumets, K. S. Zhuravlev

Результат исследования: Научные публикации в периодических изданияхстатья

Аннотация

The formation of GaN nanocrystals on the graphene-like AlN (g-AlN) modification and graphene-like (g-Si3N3) silicon nitride by ammonia molecular beam epitaxy has been investigated. It has been found that the GaN growth on the g-Si3N3 surface leads to the formation of misoriented nanocrystals. During the GaN growth on the g-AlN surface, the epitaxial growth of similarly oriented GaN quantum dots of the graphite-like modification has been observed. The lattice parameters and energy structure of two graphite-like GaN modifications with the alternating AB (graphite structure) and AA(+) (hexagonal boron nitride structure) layers have been calculated.

Язык оригиналаанглийский
Страницы (с-по)2329-2334
Число страниц6
ЖурналPhysics of the Solid State
Том61
Номер выпуска12
DOI
СостояниеОпубликовано - дек 2019

Цитировать

Milakhin, D. S., Malin, T. V., Mansurov, V. G., Galitsyn, Y. G., Kozhukhov, A. S., Aleksandrov, I. A., Rzheutski, N. V., Lebiadok, E. V., Razumets, E. A., & Zhuravlev, K. S. (2019). Forming the GaN Nanocrystals on the Graphene-Like g-AlN and g-Si3N3 Surface. Physics of the Solid State, 61(12), 2329-2334. https://doi.org/10.1134/S1063783419120308