Formation of Thick High-Aspect-Ratio Resistive Masks by the Contact Photolithography Method

A. N. Gentselev, F. N. Dul’tsev, V. I. Kondrat’ev, A. G. Lemzyakov

Результат исследования: Научные публикации в периодических изданияхстатья

2 Цитирования (Scopus)

Аннотация

A method of fabrication of thick (~100 μm and more) resistive masks is described. These masks can be used for solving various engineering problems, e.g., for fabricating x-ray-absorbing topological patterns for LIGA masks, stamp microrelief, cast moulds, etc. Specific features of the contact photolithography method, which is used to design and fabricate the research device, are described. A source of exposure radiation in this device is a light-emitting diode. A possibility of obtaining individual elements of the resistive mask (in particular, with the lateral size ~5 μm, height of ~70 μm, and aspect ratio of ~14) and also the titanium stamp microrelief (with the height up to ~40 μm) generated by means of reactive ion-beam etching through the resistive mask, is experimentally demonstrated.

Язык оригиналаанглийский
Страницы (с-по)127-134
Число страниц8
ЖурналOptoelectronics, Instrumentation and Data Processing
Том54
Номер выпуска2
DOI
СостояниеОпубликовано - 1 мар 2018

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