Formation of submicron- and micron-sized SiGe and Ge particles on Si substrates using dewetting

The arrays formation of submicron- and micron-sized SiGe and Ge dielectric particles on the Si and SiO₂ surfaces, which occur due to solid-state dewetting, is investigated. The shape of the particles and their spatial distribution turned out to be strongly dependent on the crystallographic Si surface orientation, the amount of deposited Ge and the Ge deposition rate, as well as on the presence of a SiO₂ film on the Si surface. Possible applications of various surface morphologies with metasurface properties are discussed.