Formation of GaAs Step-Terraced Surfaces by Annealing in Equilibrium Conditions

V. L. Alperovich, I. O. Akhundov, D. M. Kazantsev, N. S. Rudaya, E. E. Rodyakina, A. S. Kozhukhov, D. V. Sheglov, A. N. Karpov, N. L. Shwartz, A. S. Terekhov, Alexander V. Latyshev

Результат исследования: Публикации в книгах, отчётах, сборниках, трудах конференцийглава/разделнаучнаярецензирование

Аннотация

"Step-and-terrace" surface morphology, with regular arrays of atomically flat terraces separated by monatomic steps was obtained by annealing GaAs(001) substrates in conditions close to equilibrium. The closeness of annealing conditions to equilibrium was determined by experiments on samples with lithographic marks. The annealing kinetics are characterized by full-length monatomic steps, and also by Fourier and autocorrelation analyses. A comparison of the experiment with Monte Carlo simulation enabled us to elucidate the main stages and microscopic mechanisms of the step-terraced morphology formation, and to evaluate the effective parameters which determined this process. The formation of straight dislocation-induced steps of monatomic height were studied under thermo-mechanical stress relaxation in GaAs/AlGaAs heterostructures bonded to glass.

Язык оригиналаанглийский
Название основной публикацииAdvances in Semiconductor Nanostructures
Подзаголовок основной публикацииGrowth, Characterization, Properties and Applications
РедакторыAV Latyshev, AV Dvurechenskii, AL Aseev
ИздательElsevier Science Inc.
Страницы255-277
Число страниц23
ISBN (электронное издание)9780128105139
ISBN (печатное издание)9780128105122
DOI
СостояниеОпубликовано - 1 янв 2017

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