Femtosecond Laser Annealing of Multilayer Thin-Film Structures Based on Amorphous Germanium and Silicon

A. V. Kolchin, D. V. Shuleiko, A. V. Pavlikov, S. V. Zabotnov, L. A. Golovan, D. E. Presnov, V. A. Volodin, G. K. Krivyakin, A. A. Popov, P. K. Kashkarov

Результат исследования: Научные публикации в периодических изданияхстатья

Аннотация

Abstract: The processes of femtosecond laser annealing of thin-film multilayer structures based on amorphous silicon and germanium produced by plasma-chemical deposition on a glass substrate have been studied. The formation of periodic structures on the surface of irradiated films has been detected by the scanning electron microscopy method. Analysis of Raman spectra has shown that amorphous germanium crystallizes and a mixing of germanium and silicon layers depending on the pulse energy density occurs in the absence of amorphous silicon layers crystallization as a result of exposure to femtosecond laser pulses.

Язык оригиналаанглийский
Страницы (с-по)560-563
Число страниц4
ЖурналTechnical Physics Letters
Том46
Номер выпуска6
DOI
СостояниеОпубликовано - 1 июн 2020

Цитировать

Kolchin, A. V., Shuleiko, D. V., Pavlikov, A. V., Zabotnov, S. V., Golovan, L. A., Presnov, D. E., Volodin, V. A., Krivyakin, G. K., Popov, A. A., & Kashkarov, P. K. (2020). Femtosecond Laser Annealing of Multilayer Thin-Film Structures Based on Amorphous Germanium and Silicon. Technical Physics Letters, 46(6), 560-563. https://doi.org/10.1134/S1063785020060048