In this work, polycrystalline silicon (poly-Si) thin films were synthesized using Au-induced crystallization of amorphous silicon suboxide for the first time. The structure and elemental composition of the substrate/Au/a-SiO0.4 stacked structure annealed at 500–700°C were investigated by transmission electron microscopy (TEM), Raman, and energy-dispersive X-ray spectroscopy (EDX). TEM and Raman methods confirmed the formation of a poly-Si thin film in the bottom layer (on the substrate) as a result of annealing. At the same time, TEM and EDX studies showed the formation of a thin (barrier) SiO2 layer with a thickness of ~5 nm located between the poly-Si thin film and the upper layer consisting of Au, Si, and O. Based on the results, a mechanism for the growth of poly-Si thin films is proposed which has features (dewetting of Au films and formation of a barrier SiO2 layer) that are not characteristic of the well-known layer exchange process.
Предметные области OECD FOS+WOS
- 2.05 ТЕХНОЛОГИЯ МАТЕРИАЛОВ
- 1.03 ФИЗИЧЕСКИЕ НАУКИ И АСТРОНОМИЯ