@article{0c0e365a75084e648f548ea377562fd6,
title = "Fabrication of polycrystalline silicon thin films by gold-induced crystallization of amorphous silicon suboxide",
abstract = "In this work, polycrystalline silicon (poly-Si) thin films were synthesized using Au-induced crystallization of amorphous silicon suboxide for the first time. The structure and elemental composition of the substrate/Au/a-SiO0.4 stacked structure annealed at 500–700°C were investigated by transmission electron microscopy (TEM), Raman, and energy-dispersive X-ray spectroscopy (EDX). TEM and Raman methods confirmed the formation of a poly-Si thin film in the bottom layer (on the substrate) as a result of annealing. At the same time, TEM and EDX studies showed the formation of a thin (barrier) SiO2 layer with a thickness of ~5 nm located between the poly-Si thin film and the upper layer consisting of Au, Si, and O. Based on the results, a mechanism for the growth of poly-Si thin films is proposed which has features (dewetting of Au films and formation of a barrier SiO2 layer) that are not characteristic of the well-known layer exchange process.",
keywords = "Gold-induced crystallization, Phase transformation, Polycrystalline silicon, Silicon suboxide, Thin films",
author = "Zamchiy, {A. O.} and Baranov, {E. A.} and Starinskiy, {S. V.} and Lunev, {N. A.} and Merkulova, {I. E.}",
note = "Funding Information: This study was financially supported by the Russian Science Foundation, project # 19-79-10143. Raman and TEM studies were performed using the equipment of the Center of collective usage ??VTAN? in the ATRC department of NSU. The authors are grateful to G.K. Krivyakin for carrying out the TEM investigation of samples. Funding Information: This study was financially supported by the Russian Science Foundation , project # 19-79-10143 . Raman and TEM studies were performed using the equipment of the Center of collective usage {\textquoteleft}{\textquoteleft}VTAN” in the ATRC department of NSU. The authors are grateful to G.K. Krivyakin for carrying out the TEM investigation of samples. Publisher Copyright: {\textcopyright} 2021 Elsevier Ltd Copyright: Copyright 2021 Elsevier B.V., All rights reserved.",
year = "2021",
month = oct,
doi = "10.1016/j.vacuum.2021.110462",
language = "English",
volume = "192",
journal = "Vacuum",
issn = "0042-207X",
publisher = "Elsevier Ltd",
}