Fabrication of graphitic layers in diamond using FIB implantation and high pressure high temperature annealing

S. Rubanov, A. Suvorova, V. P. Popov, A. A. Kalinin, Yu N. Pal'yanov

Результат исследования: Научные публикации в периодических изданияхстатьярецензирование

8 Цитирования (Scopus)

Аннотация

We have used high pressure high temperature annealing (HPHT) for graphitisation of implanted layers in diamond created by 30 keV Ga+ focused ion beam. Electron microscopy has been used to investigate the implanted layers. It has been revealed that, unlike annealing at vacuum pressure, the graphitization during HPHT annealing occurred through epitaxial growth of graphite (002) planes parallel to (111) diamond planes. High quality of graphite was confirmed by high resolution electron microscopy and electron energy loss spectroscopy.

Язык оригиналаанглийский
Страницы (с-по)143-147
Число страниц5
ЖурналDiamond and Related Materials
Том63
DOI
СостояниеОпубликовано - 1 мар 2016

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