Exciton tuning in monolayer WSe2 via substrate induced electron doping

Yang Pan, Mahfujur Rahaman, Lu He, Ilya Milekhin, Gopinath Manoharan, Muhammad Awais Aslam, Thomas Blaudeck, Andreas Willert, Aleksandar Matković, Teresa I Madeira, Dietrich R T Zahn

Результат исследования: Научные публикации в периодических изданияхстатьярецензирование

Аннотация

We report large exciton tuning in WSe2 monolayers via substrate induced non-degenerate doping. We observe a redshift of ∼62 meV for the A exciton together with a 1-2 orders of magnitude photoluminescence (PL) quenching when the monolayer WSe2 is brought in contact with highly oriented pyrolytic graphite (HOPG) compared to dielectric substrates such as hBN and SiO2. As the evidence of doping from HOPG to WSe2, a drastic increase of the intensity ratio of trions to neutral excitons was observed. Using a systematic PL and Kelvin probe force microscopy (KPFM) investigation on WSe2/HOPG, WSe2/hBN, and WSe2/graphene, we conclude that this unique excitonic behavior is induced by electron doping from the substrate. Our results propose a simple yet efficient way for exciton tuning in monolayer WSe2, which plays a central role in the fundamental understanding and further device development.

Язык оригиналаанглийский
Страницы (с-по)5102-5108
Число страниц7
ЖурналNanoscale Advances
Том4
Номер выпуска23
DOI
СостояниеОпубликовано - 22 нояб. 2022
Опубликовано для внешнего пользованияДа

Предметные области OECD FOS+WOS

  • 1.03 ФИЗИЧЕСКИЕ НАУКИ И АСТРОНОМИЯ
  • 2.11 ПРОЧИЕ ТЕХНОЛОГИИ
  • 1.04 ХИМИЧЕСКИЕ НАУКИ
  • 2.05 ТЕХНОЛОГИЯ МАТЕРИАЛОВ

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