Evolution of the surface states during the in situ SiN layer formation on AlN/GaN heterostructures

Технические дисциплины и материаловедение

• Surface states 100%
• Monolayers 91%
• Heterojunctions 90%
• Valence bands 62%
• Fermi level 60%
• Amorphous films 56%
• Film growth 55%
• Molecular beam epitaxy 54%
• Thick films 42%
• High electron mobility transistors 40%
• Coatings 26%

Химические соединения

• Surface State 82%
• Monolayer 26%
• Molecular Beam Epitaxy 24%
• Amorphous Film 23%
• Electron Mobility 20%
• Fermi Level 20%
• Valence Band 19%
• Coating Agent 10%
• Surface 5%

Физика и астрономия

• high electron mobility transistors 17%
• thick films 16%
• molecular beam epitaxy 14%
• valence 12%
• coatings 11%
• augmentation 10%