Evolution of photoemission properties on Cs/GaAs and GaAs(Cs,O) surfaces under thermal cycling

V. S. Khoroshilov; D. M. Kazantsev; A. G. Zhuravlev

doi:10.1088/1742-6596/1410/1/012128

Evolution of photoemission properties on Cs/GaAs and GaAs(Cs,O) surfaces under thermal cycling

V. S. Khoroshilov, D. M. Kazantsev, A. G. Zhuravlev

Результат исследования: Научные публикации в периодических изданиях › статья по материалам конференции › рецензирование

Аннотация

The photoemission properties on Cs/GaAs and GaAs(Cs,O) surfaces prepared at room temperature were studied under thermal cycling. The evolution of electron affinity and escape probability to vacuum was measured using photoemission quantum yield spectroscopy for the surfaces with various Cs-O overlayer compositions. It was found that an increase in the oxygen exposure led to the improvement in the thermal stability of electron affinity.

Язык оригинала	английский
Номер статьи	012128
Журнал	Journal of Physics: Conference Series
Том	1410
Номер выпуска	1
DOI	https://doi.org/10.1088/1742-6596/1410/1/012128
Состояние	Опубликовано - 20 дек 2019
Событие	6th International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures, SPbOPEN 2019 - Saint Petersburg, Российская Федерация Продолжительность: 22 апр 2019 → 25 апр 2019

Доступ к документу

10.1088/1742-6596/1410/1/012128

Link to publication in Scopus

Fingerprint Подробные сведения о темах исследования «Evolution of photoemission properties on Cs/GaAs and GaAs(Cs,O) surfaces under thermal cycling». Вместе они формируют уникальный семантический отпечаток (fingerprint).

Цитировать

@article{610200f1c7434ad39fb424843d3f2aaa,

title = "Evolution of photoemission properties on Cs/GaAs and GaAs(Cs,O) surfaces under thermal cycling",

abstract = "The photoemission properties on Cs/GaAs and GaAs(Cs,O) surfaces prepared at room temperature were studied under thermal cycling. The evolution of electron affinity and escape probability to vacuum was measured using photoemission quantum yield spectroscopy for the surfaces with various Cs-O overlayer compositions. It was found that an increase in the oxygen exposure led to the improvement in the thermal stability of electron affinity.",

author = "Khoroshilov, {V. S.} and Kazantsev, {D. M.} and Zhuravlev, {A. G.}",

year = "2019",

month = dec,

day = "20",

doi = "10.1088/1742-6596/1410/1/012128",

language = "English",

volume = "1410",

journal = "Journal of Physics: Conference Series",

issn = "1742-6588",

publisher = "IOP Publishing Ltd.",

number = "1",

note = "6th International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures, SPbOPEN 2019 ; Conference date: 22-04-2019 Through 25-04-2019",

}

Evolution of photoemission properties on Cs/GaAs and GaAs(Cs,O) surfaces under thermal cycling. / Khoroshilov, V. S.; Kazantsev, D. M.; Zhuravlev, A. G.

В: Journal of Physics: Conference Series, Том 1410, № 1, 012128, 20.12.2019.

Результат исследования: Научные публикации в периодических изданиях › статья по материалам конференции › рецензирование

TY - JOUR

T1 - Evolution of photoemission properties on Cs/GaAs and GaAs(Cs,O) surfaces under thermal cycling

AU - Khoroshilov, V. S.

AU - Kazantsev, D. M.

AU - Zhuravlev, A. G.

PY - 2019/12/20

Y1 - 2019/12/20

N2 - The photoemission properties on Cs/GaAs and GaAs(Cs,O) surfaces prepared at room temperature were studied under thermal cycling. The evolution of electron affinity and escape probability to vacuum was measured using photoemission quantum yield spectroscopy for the surfaces with various Cs-O overlayer compositions. It was found that an increase in the oxygen exposure led to the improvement in the thermal stability of electron affinity.

AB - The photoemission properties on Cs/GaAs and GaAs(Cs,O) surfaces prepared at room temperature were studied under thermal cycling. The evolution of electron affinity and escape probability to vacuum was measured using photoemission quantum yield spectroscopy for the surfaces with various Cs-O overlayer compositions. It was found that an increase in the oxygen exposure led to the improvement in the thermal stability of electron affinity.

UR - http://www.scopus.com/inward/record.url?scp=85078202071&partnerID=8YFLogxK

U2 - 10.1088/1742-6596/1410/1/012128

DO - 10.1088/1742-6596/1410/1/012128

M3 - Conference article

AN - SCOPUS:85078202071

VL - 1410

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6588

IS - 1

M1 - 012128

T2 - 6th International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures, SPbOPEN 2019

Y2 - 22 April 2019 through 25 April 2019

ER -