Evolution of photoemission properties on Cs/GaAs and GaAs(Cs,O) surfaces under thermal cycling

V. S. Khoroshilov; D. M. Kazantsev; A. G. Zhuravlev

doi:10.1088/1742-6596/1410/1/012128

Evolution of photoemission properties on Cs/GaAs and GaAs(Cs,O) surfaces under thermal cycling

V. S. Khoroshilov, D. M. Kazantsev, A. G. Zhuravlev

Результат исследования: Научные публикации в периодических изданиях › статья по материалам конференции

Аннотация

The photoemission properties on Cs/GaAs and GaAs(Cs,O) surfaces prepared at room temperature were studied under thermal cycling. The evolution of electron affinity and escape probability to vacuum was measured using photoemission quantum yield spectroscopy for the surfaces with various Cs-O overlayer compositions. It was found that an increase in the oxygen exposure led to the improvement in the thermal stability of electron affinity.

Язык оригинала	английский
Номер статьи	012128
Журнал	Journal of Physics: Conference Series
Том	1410
Номер выпуска	1
DOI	https://doi.org/10.1088/1742-6596/1410/1/012128
Состояние	Опубликовано - 20 дек 2019
Событие	6th International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures, SPbOPEN 2019 - Saint Petersburg, Российская Федерация Продолжительность: 22 апр 2019 → 25 апр 2019

Доступ к документу

10.1088/1742-6596/1410/1/012128

Link to publication in Scopus

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Цитировать

Khoroshilov, V. S., Kazantsev, D. M., & Zhuravlev, A. G. (2019). Evolution of photoemission properties on Cs/GaAs and GaAs(Cs,O) surfaces under thermal cycling. Journal of Physics: Conference Series, 1410(1), [012128]. https://doi.org/10.1088/1742-6596/1410/1/012128

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abstract = "The photoemission properties on Cs/GaAs and GaAs(Cs,O) surfaces prepared at room temperature were studied under thermal cycling. The evolution of electron affinity and escape probability to vacuum was measured using photoemission quantum yield spectroscopy for the surfaces with various Cs-O overlayer compositions. It was found that an increase in the oxygen exposure led to the improvement in the thermal stability of electron affinity.",

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Evolution of photoemission properties on Cs/GaAs and GaAs(Cs,O) surfaces under thermal cycling. / Khoroshilov, V. S.; Kazantsev, D. M.; Zhuravlev, A. G.

В: Journal of Physics: Conference Series, Том 1410, № 1, 012128, 20.12.2019.

Результат исследования: Научные публикации в периодических изданиях › статья по материалам конференции

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