Evolution of Micropits on Large Terraces of the Si(111) Surface during High-Temperature Annealing

A. S. Petrov, S. V. Sitnikov, S. S. Kosolobov, A. V. Latyshev

Результат исследования: Научные публикации в периодических изданияхстатья

Аннотация

Abstract: The transformation of micropits on large terraces of the Si(111) surface containing no vicinal atomic steps has been investigated by in situ ultrahigh-vacuum reflection electron microscopy upon thermal annealing of the substrate in the range of 1200–1400°C. A procedure for the formation of micropits on large terraces of the Si(111) surface with the application of focused-ion-beam (Ga + ) technology has been proposed. It has been found that the micropit decay kinetics varies upon reaching the critical radius R crit , which is caused by the activation of nucleation of two-dimensional vacancy islands on the micropit bottom. A theoretical model describing variations in the lateral sizes of the micropit both before and after reaching R crit has been proposed. Based on analysis of the found temperature dependence of the nucleation frequencies of two-dimensional vacancy pits on the micropit bottom, the effective energy of nucleation of a vacancy island has been determined to be 4.1 ± 0.1 eV.

Язык оригиналаанглийский
Страницы (с-по)434-438
Число страниц5
ЖурналSemiconductors
Том53
Номер выпуска4
DOI
СостояниеОпубликовано - 1 апр 2019

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