Etching Kinetics of Si(111) Surface by Selenium Molecular Beam

S. A. Ponomarev, D. I. Rogilo, A. S. Petrov, D. V. Sheglov, A. V. Latyshev

Результат исследования: Научные публикации в периодических изданияхстатьярецензирование

Аннотация

Using in situ ultrahigh vacuum reflection electron microscopy, three modes of the etching kinetics of the Si(111) surface with a selenium molecular beam are revealed. In the low temperature region ((Formula presented.) depending on the Se deposition rate), the etching kinetics is limited by the energy of formation and desorption of SiSe2 molecules and the surface is completely covered by an impurity-induced silicon selenide phase ‘‘1×1’’-Se. In the temperature range ~700-1100°C the etching rate is limited by the amount of Se deposition flow and does not depend on the temperature, surface structure, and etching mechanism (step-layer or two dimensional-island). At high temperatures ((Formula presented.), the sublimation of Si atoms begins to make the main contribution to the silicon flux from the surface. A theoretical model describing the temperature and kinetics of transitions between etching modes is formulated.

Язык оригиналаанглийский
Страницы (с-по)449-455
Число страниц7
ЖурналOptoelectronics, Instrumentation and Data Processing
Том56
Номер выпуска5
DOI
СостояниеОпубликовано - сен 2020

Предметные области OECD FOS+WOS

  • 2.02 ЭЛЕКТРОТЕХНИКА, ЭЛЕКТРОННАЯ ТЕХНИКА, ИНФОРМАЦИОННЫЕ ТЕХНОЛОГИИ
  • 1.03 ФИЗИЧЕСКИЕ НАУКИ И АСТРОНОМИЯ

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