EPR study of germanium-vacancy defects in diamonds

V. A. Nadolinny, A. Yu Komarovskikh, Yu N. Palyanov, I. N. Kupriyanov, Yu M. Borzdov, M. I. Rakhmanova, O. P. Yuryeva, S. L. Veber

Результат исследования: Научные публикации в периодических изданияхстатьярецензирование

5 Цитирования (Scopus)


Diamonds synthesized in the Mg0.9–Ge0.1–C system at high pressure-high temperature (HPHT) conditions are investigated by the EPR and luminescence methods. A new GeV paramagnetic center with the spin S = 1 and D3d symmetry is detected in the EPR spectra of the Ge-doped samples, along with the impurity nitrogen (Р1) and silicon-vacancy defect KUL1 (SiV0) centers. The investigation demonstrates that this new center has a double semi-vacancy structure with the germanium atom in the center. The studied GeV center is in a neutral charge state and is assigned to the 602 nm system in the photoluminescence spectra.

Язык оригиналаанглийский
Страницы (с-по)1041-1043
Число страниц3
ЖурналJournal of Structural Chemistry
Номер выпуска5
СостояниеОпубликовано - 1 сент. 2016


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