Enhancement of the Luminescence Signal from Self-Assembled Ge(Si) Nanoislands due to Interaction with the Modes of Two-Dimensional Photonic Crystals

The results of studies of the luminescence properties of two-dimensional photonic crystals formed on the basis of silicon structures with self-assembled Ge(Si) nanoislands are reported. The possibilities of substantially enhancing the luminescence response of the active medium (Ge(Si) nanoislands) in the wavelength range 1.2–1.6 μm are shown for such structures. The specific features of the luminescence response of a photonic crystal in the vicinity of the Γ point of its Brillouin zone are studied. It is shown that, along with the broadband response characteristic of the radiative modes of photonic crystals, high-Q resonances, for which the Q factor exceeds 10³, can also be observed in such structures. The last-mentioned resonances are observed in a certain range of lattice parameters of photonic crystals.