Enhanced optical properties of silicon based quantum dot heterostructures

Anatoly Dvurechenskii; Andrew Yakimov; Victor Kirienko; Alekcei Bloshkin; Vladimir Zinovyev; Aigul Zinovieva; Alexander Mudryi

doi:10.4028/www.scientific.net/DDF.386.68

Enhanced optical properties of silicon based quantum dot heterostructures

Anatoly Dvurechenskii, Andrew Yakimov, Victor Kirienko, Alekcei Bloshkin, Vladimir Zinovyev, Aigul Zinovieva, Alexander Mudryi

Результат исследования: Публикации в книгах, отчётах, сборниках, трудах конференций › статья в сборнике материалов конференции › научная › рецензирование

2 Цитирования (Scopus)

Аннотация

New approaches to enhance properties of silicon based quantum dot heterostructures for optical device application were developed. That is strain driven heteroepitaxy, small-sized quantum dots, elemental compositions of the heterointerface, virtual substrate, plasmonic effects, and the quantum dot charging occupation with holes in epitaxially grown Ge quantum dots (QDs) on Si(100). Experiments have shown extraordinary optical properties of Ge/Si QDs heterostructures and mid-infrared quantum dot photodetectors performance.

Язык оригинала	английский
Название основной публикации	Physics and Technology of Nanostructured Materials
Издатель	Trans Tech Publications Ltd
Страницы	68-74
Число страниц	7
Том	386 DDF
ISBN (печатное издание)	9783035714777
DOI	https://doi.org/10.4028/www.scientific.net/DDF.386.68
Состояние	Опубликовано - 1 янв. 2018
Событие	4th Asian School-Conference on Physics and Technology of Nanostructured Materials, ASCO-NANOMAT 2018 - Vladivostok, Российская Федерация Продолжительность: 23 сент. 2018 → 28 сент. 2018

Конференция

Конференция	4th Asian School-Conference on Physics and Technology of Nanostructured Materials, ASCO-NANOMAT 2018
Страна/Tерритория	Российская Федерация
Город	Vladivostok
Период	23.09.2018 → 28.09.2018

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10.4028/www.scientific.net/DDF.386.68

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title = "Enhanced optical properties of silicon based quantum dot heterostructures",

abstract = "New approaches to enhance properties of silicon based quantum dot heterostructures for optical device application were developed. That is strain driven heteroepitaxy, small-sized quantum dots, elemental compositions of the heterointerface, virtual substrate, plasmonic effects, and the quantum dot charging occupation with holes in epitaxially grown Ge quantum dots (QDs) on Si(100). Experiments have shown extraordinary optical properties of Ge/Si QDs heterostructures and mid-infrared quantum dot photodetectors performance.",

keywords = "Ge, Infrared photodetector, Luminescence, Polariton, Quantum dot, Si, Surface plasmon",

author = "Anatoly Dvurechenskii and Andrew Yakimov and Victor Kirienko and Alekcei Bloshkin and Vladimir Zinovyev and Aigul Zinovieva and Alexander Mudryi",

note = "Publisher Copyright: {\textcopyright} 2018 Trans Tech Publications, Switzerland; 4th Asian School-Conference on Physics and Technology of Nanostructured Materials, ASCO-NANOMAT 2018 ; Conference date: 23-09-2018 Through 28-09-2018",

year = "2018",

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doi = "10.4028/www.scientific.net/DDF.386.68",

language = "English",

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booktitle = "Physics and Technology of Nanostructured Materials",

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Dvurechenskii, A, Yakimov, A, Kirienko, V, Bloshkin, A, Zinovyev, V, Zinovieva, A & Mudryi, A 2018, Enhanced optical properties of silicon based quantum dot heterostructures. в Physics and Technology of Nanostructured Materials. том. 386 DDF, Trans Tech Publications Ltd, стр. 68-74, 4th Asian School-Conference on Physics and Technology of Nanostructured Materials, ASCO-NANOMAT 2018, Vladivostok, Российская Федерация, 23.09.2018. https://doi.org/10.4028/www.scientific.net/DDF.386.68

Enhanced optical properties of silicon based quantum dot heterostructures. / Dvurechenskii, Anatoly; Yakimov, Andrew; Kirienko, Victor и др.

Physics and Technology of Nanostructured Materials. Том 386 DDF Trans Tech Publications Ltd, 2018. стр. 68-74.

Результат исследования: Публикации в книгах, отчётах, сборниках, трудах конференций › статья в сборнике материалов конференции › научная › рецензирование

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T1 - Enhanced optical properties of silicon based quantum dot heterostructures

AU - Dvurechenskii, Anatoly

AU - Yakimov, Andrew

AU - Kirienko, Victor

AU - Bloshkin, Alekcei

AU - Zinovyev, Vladimir

AU - Zinovieva, Aigul

AU - Mudryi, Alexander

PY - 2018/1/1

Y1 - 2018/1/1

N2 - New approaches to enhance properties of silicon based quantum dot heterostructures for optical device application were developed. That is strain driven heteroepitaxy, small-sized quantum dots, elemental compositions of the heterointerface, virtual substrate, plasmonic effects, and the quantum dot charging occupation with holes in epitaxially grown Ge quantum dots (QDs) on Si(100). Experiments have shown extraordinary optical properties of Ge/Si QDs heterostructures and mid-infrared quantum dot photodetectors performance.

AB - New approaches to enhance properties of silicon based quantum dot heterostructures for optical device application were developed. That is strain driven heteroepitaxy, small-sized quantum dots, elemental compositions of the heterointerface, virtual substrate, plasmonic effects, and the quantum dot charging occupation with holes in epitaxially grown Ge quantum dots (QDs) on Si(100). Experiments have shown extraordinary optical properties of Ge/Si QDs heterostructures and mid-infrared quantum dot photodetectors performance.

KW - Ge

KW - Infrared photodetector

KW - Luminescence

KW - Polariton

KW - Quantum dot

KW - Si

KW - Surface plasmon

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SN - 9783035714777

VL - 386 DDF

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BT - Physics and Technology of Nanostructured Materials

PB - Trans Tech Publications Ltd

T2 - 4th Asian School-Conference on Physics and Technology of Nanostructured Materials, ASCO-NANOMAT 2018

Y2 - 23 September 2018 through 28 September 2018

ER -

Enhanced optical properties of silicon based quantum dot heterostructures

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