@inproceedings{5804621c4904415ab09030fe48236eb0,
title = "Embedding of iron silicide nanocrystals into monocrystalline silicon: Suppression of emersion effect",
abstract = "The formation of iron silicide nanocrystals (NCs) and their embedding into monocrystalline silicon was studied. Solid phase epitaxy of 0.4 nm Fe at 630 °C resulted in formation of NCs consisted of β-FeSi2 and ϵ-FeSi phases. Annealing of NCs at 750 °C for 90 min led to transformation of β-FeSi2 and ϵ-FeSi into α-FeSi2. On the other hand, silicon layer growth over as-formed NCs, at the same temperature, resulted in formation of single phase NCs consisted of β-FeSi2. Silicon deposition rate proved to be the crucial point for a full embedding of NCs. The rate of 1 nm/min resulted in emersion of NCs to the surface during silicon overgrowth irrespective of Si cap layer thickness, while the rate of 8 nm/min led to the full embedding of β-FeSi2 NCs. Both incompletely and fully embedded β-FeSi2 NCs have epitaxial relationship and stress favorable for an indirect to direct band-gap transition at Y point.",
keywords = "embedded nanocrystals, epitaxy, phase transformation, silicon, β-FeSi, TRANSITION, TEMPERATURE, beta-FeSi2, FESI2, GAAS, SOLID-PHASE EPITAXY, QUANTUM DOTS",
author = "Evgeniy Chusovitin and Dmitry Goroshko and Sergey Dotsenko and Alexander Shevlyagin and Anton Gutakovskii and Nikolay Galkin",
year = "2019",
month = jan,
day = "1",
doi = "10.1117/12.2314675",
language = "English",
volume = "11024",
series = "Proceedings of SPIE",
publisher = "SPIE",
editor = "Kulchin, {Yuri N.} and Romashko, {Roman V.} and Jyh-Chiang Jiang",
booktitle = "Asia-Pacific Conference on Fundamental Problems of Opto- and Microelectronics 2017",
address = "United States",
note = "16th Asia-Pacific Conference on Fundamental Problems of Opto- and Microelectronics, APCOM 2017 ; Conference date: 05-11-2017 Through 07-11-2017",
}