Embedding of iron silicide nanocrystals into monocrystalline silicon: Suppression of emersion effect

Evgeniy Chusovitin, Dmitry Goroshko, Sergey Dotsenko, Alexander Shevlyagin, Anton Gutakovskii, Nikolay Galkin

Результат исследования: Публикации в книгах, отчётах, сборниках, трудах конференцийстатья в сборнике материалов конференциинаучнаярецензирование

Аннотация

The formation of iron silicide nanocrystals (NCs) and their embedding into monocrystalline silicon was studied. Solid phase epitaxy of 0.4 nm Fe at 630 °C resulted in formation of NCs consisted of β-FeSi2 and ϵ-FeSi phases. Annealing of NCs at 750 °C for 90 min led to transformation of β-FeSi2 and ϵ-FeSi into α-FeSi2. On the other hand, silicon layer growth over as-formed NCs, at the same temperature, resulted in formation of single phase NCs consisted of β-FeSi2. Silicon deposition rate proved to be the crucial point for a full embedding of NCs. The rate of 1 nm/min resulted in emersion of NCs to the surface during silicon overgrowth irrespective of Si cap layer thickness, while the rate of 8 nm/min led to the full embedding of β-FeSi2 NCs. Both incompletely and fully embedded β-FeSi2 NCs have epitaxial relationship and stress favorable for an indirect to direct band-gap transition at Y point.

Язык оригиналаанглийский
Название основной публикацииAsia-Pacific Conference on Fundamental Problems of Opto- and Microelectronics 2017
РедакторыYuri N. Kulchin, Roman V. Romashko, Jyh-Chiang Jiang
ИздательSPIE
Число страниц8
Том11024
ISBN (электронное издание)9781510627147
DOI
СостояниеОпубликовано - 1 янв 2019
Событие16th Asia-Pacific Conference on Fundamental Problems of Opto- and Microelectronics, APCOM 2017 - Taipei, Китайская Провинция Тайвань
Продолжительность: 5 ноя 20177 ноя 2017

Серия публикаций

НазваниеProceedings of SPIE
ИздательSPIE-INT SOC OPTICAL ENGINEERING
Том11024
ISSN (печатное издание)0277-786X

Конференция

Конференция16th Asia-Pacific Conference on Fundamental Problems of Opto- and Microelectronics, APCOM 2017
СтранаКитайская Провинция Тайвань
ГородTaipei
Период05.11.201707.11.2017

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  • Цитировать

    Chusovitin, E., Goroshko, D., Dotsenko, S., Shevlyagin, A., Gutakovskii, A., & Galkin, N. (2019). Embedding of iron silicide nanocrystals into monocrystalline silicon: Suppression of emersion effect. В Y. N. Kulchin, R. V. Romashko, & J-C. Jiang (Ред.), Asia-Pacific Conference on Fundamental Problems of Opto- and Microelectronics 2017 (Том 11024). [1102402] (Proceedings of SPIE; Том 11024). SPIE. https://doi.org/10.1117/12.2314675