Electronic structure and nanoscale potential fluctuations in strongly nonstoichiometric PECVD SiO_x

Технические дисциплины и материаловедение

• Electronic structure 100%
• Plasma enhanced chemical vapor deposition 95%
• Nanoclusters 29%
• High resolution electron microscopy 28%
• Silicon 26%
• Oxygen supply 24%
• Raman scattering 24%
• Silicon oxides 24%
• Amorphous silicon 22%
• Charge transfer 21%
• X ray photoelectron spectroscopy 20%
• Electrons 16%
• Glass 13%
• Substrates 11%
• Chemical analysis 10%
• Data storage equipment 10%

Химические соединения

• Nonstoichiometric Compound 75%
• Electronic State 49%
• Potential Well 24%
• Amorphous Silicon 22%
• Silicon Oxide 20%
• Plasma Enhanced Chemical Vapour Deposition 20%
• Glass Substrate 16%
• Charge Transfer 11%
• Molecular Cluster 10%
• Electron Particle 9%
• Dioxygen 8%
• Energy 7%

Физика и астрономия

• electronic structure 50%
• nanoclusters 18%
• silicon 18%
• silicon oxides 17%
• amorphous silicon 15%
• electron microscopy 14%
• diagrams 13%
• Raman spectra 12%
• vapor deposition 12%
• reactors 12%
• high resolution 10%
• oxygen 10%
• glass 9%
• electrons 7%