Electronic structure and charge transport mechanism in a forming-free SiOx-based memristor

Andrei A. Gismatulin, Vitalii A. Voronkovskii, Gennadiy N. Kamaev, Yuriy N. Novikov, Vladimir N. Kruchinin, Grigory K. Krivyakin, Vladimir A. Gritsenko, Igor P. Prosvirin, Albert Chin

Результат исследования: Научные публикации в периодических изданияхстатьярецензирование

Аннотация

THe memristor is a key memory element for neuromorphic electronics and new generation flash memories. One of the most promising materials for memristor technology is silicon oxide SiOx, which is compatible with silicon-based technology. In this paper, the electronic structure and charge transport mechanism in a forming-free SiOx-based memristor fabricated with the plasma enhanced chemical vapor deposition method is investigated. The experimental current-voltage characteristics measured at different temperatures in high-resistance, low-resistance and intermediate states are compared with various charge transport theories. The charge transport in all states is limited by the space charge-limited current model. The trap parameters, responsible for the charge transport in a SiOx-based memristor in different states, are determined.

Язык оригиналаанглийский
Номер статьи505704
Число страниц10
ЖурналNanotechnology
Том31
Номер выпуска50
DOI
СостояниеОпубликовано - 11 дек 2020

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