Electronic structure and charge transport in nonstoichiometric tantalum oxide

T. V. Perevalov; V. A. Gritsenko; A. A. Gismatulin; V. A. Voronkovskii; A. K. Gerasimova; V. Sh Aliev; I. A. Prosvirin

doi:10.1088/1361-6528/aaba4c

Electronic structure and charge transport in nonstoichiometric tantalum oxide

T. V. Perevalov, V. A. Gritsenko, A. A. Gismatulin, V. A. Voronkovskii, A. K. Gerasimova, V. Sh Aliev, I. A. Prosvirin

Результат исследования: Научные публикации в периодических изданиях › статья

9 Цитирования (Scopus)

Аннотация

The atomic and electronic structure of nonstoichiometric oxygen-deficient tantalum oxide TaO_x<2.5 grown by ion beam sputtering deposition was studied. The TaO_x film content was analyzed by x-ray photoelectron spectroscopy and by quantum-chemistry simulation. TaO_x is composed of Ta₂O₅, metallic tantalum clusters and tantalum suboxides. A method for evaluating the stoichiometry parameter of TaO_x from the comparison of experimental and theoretical photoelectron valence band spectra is proposed. The charge transport properties of TaO_x were experimentally studied and the transport mechanism was quantitatively analyzed with four theoretical dielectric conductivity models. It was found that the charge transport in almost stoichiometric and nonstoichiometric tantalum oxide can be consistently described by the phonon-assisted tunneling between traps.

Язык оригинала	английский
Номер статьи	264001
Число страниц	9
Журнал	Nanotechnology
Том	29
Номер выпуска	26
DOI	https://doi.org/10.1088/1361-6528/aaba4c
Состояние	Опубликовано - 29 июн 2018

Доступ к документу

10.1088/1361-6528/aaba4c

Link to publication in Scopus

Fingerprint Подробные сведения о темах исследования «Electronic structure and charge transport in nonstoichiometric tantalum oxide». Вместе они формируют уникальный семантический отпечаток (fingerprint).

Цитировать

Perevalov, T. V., Gritsenko, V. A., Gismatulin, A. A., Voronkovskii, V. A., Gerasimova, A. K., Aliev, V. S., & Prosvirin, I. A. (2018). Electronic structure and charge transport in nonstoichiometric tantalum oxide. Nanotechnology, 29(26), [264001]. https://doi.org/10.1088/1361-6528/aaba4c

@article{72f901195d4c41f9922dd6e9a0bac1cf,

title = "Electronic structure and charge transport in nonstoichiometric tantalum oxide",

abstract = "The atomic and electronic structure of nonstoichiometric oxygen-deficient tantalum oxide TaOx<2.5 grown by ion beam sputtering deposition was studied. The TaOx film content was analyzed by x-ray photoelectron spectroscopy and by quantum-chemistry simulation. TaOx is composed of Ta2O5, metallic tantalum clusters and tantalum suboxides. A method for evaluating the stoichiometry parameter of TaOx from the comparison of experimental and theoretical photoelectron valence band spectra is proposed. The charge transport properties of TaOx were experimentally studied and the transport mechanism was quantitatively analyzed with four theoretical dielectric conductivity models. It was found that the charge transport in almost stoichiometric and nonstoichiometric tantalum oxide can be consistently described by the phonon-assisted tunneling between traps.",

keywords = "charge localization, charge transport, electronic structure, oxygen vacancy, photoelectron spectroscopy, quantumchemistry calculations, THIN-FILMS, TRAP, MECHANISMS, TAOX, OXYGEN VACANCY, quantum-chemistry calculations, CONDUCTION, CRYSTALLINE",

author = "Perevalov, {T. V.} and Gritsenko, {V. A.} and Gismatulin, {A. A.} and Voronkovskii, {V. A.} and Gerasimova, {A. K.} and Aliev, {V. Sh} and Prosvirin, {I. A.}",

year = "2018",

month = jun,

day = "29",

doi = "10.1088/1361-6528/aaba4c",

language = "English",

volume = "29",

journal = "Nanotechnology",

issn = "0957-4484",

publisher = "IOP Publishing Ltd.",

number = "26",

}

Electronic structure and charge transport in nonstoichiometric tantalum oxide. / Perevalov, T. V.; Gritsenko, V. A.; Gismatulin, A. A.; Voronkovskii, V. A.; Gerasimova, A. K.; Aliev, V. Sh; Prosvirin, I. A.

В: Nanotechnology, Том 29, № 26, 264001, 29.06.2018.

Результат исследования: Научные публикации в периодических изданиях › статья

TY - JOUR

T1 - Electronic structure and charge transport in nonstoichiometric tantalum oxide

AU - Perevalov, T. V.

AU - Gritsenko, V. A.

AU - Gismatulin, A. A.

AU - Voronkovskii, V. A.

AU - Gerasimova, A. K.

AU - Aliev, V. Sh

AU - Prosvirin, I. A.

PY - 2018/6/29

Y1 - 2018/6/29

N2 - The atomic and electronic structure of nonstoichiometric oxygen-deficient tantalum oxide TaOx<2.5 grown by ion beam sputtering deposition was studied. The TaOx film content was analyzed by x-ray photoelectron spectroscopy and by quantum-chemistry simulation. TaOx is composed of Ta2O5, metallic tantalum clusters and tantalum suboxides. A method for evaluating the stoichiometry parameter of TaOx from the comparison of experimental and theoretical photoelectron valence band spectra is proposed. The charge transport properties of TaOx were experimentally studied and the transport mechanism was quantitatively analyzed with four theoretical dielectric conductivity models. It was found that the charge transport in almost stoichiometric and nonstoichiometric tantalum oxide can be consistently described by the phonon-assisted tunneling between traps.

AB - The atomic and electronic structure of nonstoichiometric oxygen-deficient tantalum oxide TaOx<2.5 grown by ion beam sputtering deposition was studied. The TaOx film content was analyzed by x-ray photoelectron spectroscopy and by quantum-chemistry simulation. TaOx is composed of Ta2O5, metallic tantalum clusters and tantalum suboxides. A method for evaluating the stoichiometry parameter of TaOx from the comparison of experimental and theoretical photoelectron valence band spectra is proposed. The charge transport properties of TaOx were experimentally studied and the transport mechanism was quantitatively analyzed with four theoretical dielectric conductivity models. It was found that the charge transport in almost stoichiometric and nonstoichiometric tantalum oxide can be consistently described by the phonon-assisted tunneling between traps.

KW - charge localization

KW - charge transport

KW - electronic structure

KW - oxygen vacancy

KW - photoelectron spectroscopy

KW - quantumchemistry calculations

KW - THIN-FILMS

KW - TRAP

KW - MECHANISMS

KW - TAOX

KW - OXYGEN VACANCY

KW - quantum-chemistry calculations

KW - CONDUCTION

KW - CRYSTALLINE

UR - http://www.scopus.com/inward/record.url?scp=85047758530&partnerID=8YFLogxK

U2 - 10.1088/1361-6528/aaba4c

DO - 10.1088/1361-6528/aaba4c

M3 - Article

C2 - 29589838

AN - SCOPUS:85047758530

VL - 29

JO - Nanotechnology

JF - Nanotechnology

SN - 0957-4484

IS - 26

M1 - 264001

ER -