Electron Paramagnetic Resonance in Ge/Si Heterostructures with Mn-Doped Quantum Dots

A. F. Zinovieva; V. A. Zinovyev; N. P. Stepina; A. V. Katsuba; A. V. Dvurechenskii; A. K. Gutakovskii; L. V. Kulik; A. S. Bogomyakov; S. B. Erenburg; S. V. Trubina; M. Voelskow

doi:10.1134/S0021364019040143

Electron Paramagnetic Resonance in Ge/Si Heterostructures with Mn-Doped Quantum Dots

A. F. Zinovieva, V. A. Zinovyev, N. P. Stepina, A. V. Katsuba, A. V. Dvurechenskii, A. K. Gutakovskii, L. V. Kulik, A. S. Bogomyakov, S. B. Erenburg, S. V. Trubina, M. Voelskow

Результат исследования: Научные публикации в периодических изданиях › статья › рецензирование

Аннотация

Ge/Si quantum dot (QD) structures doped with Mn have been tested by the EPR method to find the optimal conditions for formation of the diluted magnetic semiconductor (DMS) phase inside QDs. The effect of Mn doping has been studied for two series of samples: series A with QDs grown at 450°C and varied Mn concentration and series B with QDs grown at different temperature with Mn concentration x = 0.02. Several effects of modification of the EPR spectra due to Mn presence in the samples have been obtained. These effects are related to (i) strain reduction due to Ge—Si intermixing, (ii) QD enlargement and change in QD shape, (iii) presence of an additional magnetic field produced by Mn atoms incorporated in QDs. The data obtained allow us to understand the reasons for irreproducibility of the results available in the literature on the creation of magnetic Ge _{1 − x} Mn _x quantum dots.

Язык оригинала	английский
Страницы (с-по)	270-275
Число страниц	6
Журнал	JETP Letters
Том	109
Номер выпуска	4
DOI	https://doi.org/10.1134/S0021364019040143
Состояние	Опубликовано - 1 февр. 2019

Доступ к документу

10.1134/S0021364019040143

Другие файлы и ссылки

Link to publication in Scopus

Fingerprint

Подробные сведения о темах исследования «Electron Paramagnetic Resonance in Ge/Si Heterostructures with Mn-Doped Quantum Dots». Вместе они формируют уникальный семантический отпечаток (fingerprint).

Цитировать

@article{764df48b17da4ac7896e6022b9199fa5,

title = "Electron Paramagnetic Resonance in Ge/Si Heterostructures with Mn-Doped Quantum Dots",

abstract = " Ge/Si quantum dot (QD) structures doped with Mn have been tested by the EPR method to find the optimal conditions for formation of the diluted magnetic semiconductor (DMS) phase inside QDs. The effect of Mn doping has been studied for two series of samples: series A with QDs grown at 450°C and varied Mn concentration and series B with QDs grown at different temperature with Mn concentration x = 0.02. Several effects of modification of the EPR spectra due to Mn presence in the samples have been obtained. These effects are related to (i) strain reduction due to Ge—Si intermixing, (ii) QD enlargement and change in QD shape, (iii) presence of an additional magnetic field produced by Mn atoms incorporated in QDs. The data obtained allow us to understand the reasons for irreproducibility of the results available in the literature on the creation of magnetic Ge 1 − x Mn x quantum dots. ",

author = "Zinovieva, {A. F.} and Zinovyev, {V. A.} and Stepina, {N. P.} and Katsuba, {A. V.} and Dvurechenskii, {A. V.} and Gutakovskii, {A. K.} and Kulik, {L. V.} and Bogomyakov, {A. S.} and Erenburg, {S. B.} and Trubina, {S. V.} and M. Voelskow",

year = "2019",

month = feb,

day = "1",

doi = "10.1134/S0021364019040143",

language = "English",

volume = "109",

pages = "270--275",

journal = "JETP Letters",

issn = "0021-3640",

publisher = "MAIK NAUKA/INTERPERIODICA/SPRINGER",

number = "4",

}

Electron Paramagnetic Resonance in Ge/Si Heterostructures with Mn-Doped Quantum Dots. / Zinovieva, A. F.; Zinovyev, V. A.; Stepina, N. P. и др.

В: JETP Letters, Том 109, № 4, 01.02.2019, стр. 270-275.

Результат исследования: Научные публикации в периодических изданиях › статья › рецензирование

TY - JOUR

T1 - Electron Paramagnetic Resonance in Ge/Si Heterostructures with Mn-Doped Quantum Dots

AU - Zinovieva, A. F.

AU - Zinovyev, V. A.

AU - Stepina, N. P.

AU - Katsuba, A. V.

AU - Dvurechenskii, A. V.

AU - Gutakovskii, A. K.

AU - Kulik, L. V.

AU - Bogomyakov, A. S.

AU - Erenburg, S. B.

AU - Trubina, S. V.

AU - Voelskow, M.

PY - 2019/2/1

Y1 - 2019/2/1

N2 - Ge/Si quantum dot (QD) structures doped with Mn have been tested by the EPR method to find the optimal conditions for formation of the diluted magnetic semiconductor (DMS) phase inside QDs. The effect of Mn doping has been studied for two series of samples: series A with QDs grown at 450°C and varied Mn concentration and series B with QDs grown at different temperature with Mn concentration x = 0.02. Several effects of modification of the EPR spectra due to Mn presence in the samples have been obtained. These effects are related to (i) strain reduction due to Ge—Si intermixing, (ii) QD enlargement and change in QD shape, (iii) presence of an additional magnetic field produced by Mn atoms incorporated in QDs. The data obtained allow us to understand the reasons for irreproducibility of the results available in the literature on the creation of magnetic Ge 1 − x Mn x quantum dots.

AB - Ge/Si quantum dot (QD) structures doped with Mn have been tested by the EPR method to find the optimal conditions for formation of the diluted magnetic semiconductor (DMS) phase inside QDs. The effect of Mn doping has been studied for two series of samples: series A with QDs grown at 450°C and varied Mn concentration and series B with QDs grown at different temperature with Mn concentration x = 0.02. Several effects of modification of the EPR spectra due to Mn presence in the samples have been obtained. These effects are related to (i) strain reduction due to Ge—Si intermixing, (ii) QD enlargement and change in QD shape, (iii) presence of an additional magnetic field produced by Mn atoms incorporated in QDs. The data obtained allow us to understand the reasons for irreproducibility of the results available in the literature on the creation of magnetic Ge 1 − x Mn x quantum dots.

UR - http://www.scopus.com/inward/record.url?scp=85065402062&partnerID=8YFLogxK

U2 - 10.1134/S0021364019040143

DO - 10.1134/S0021364019040143

M3 - Article

AN - SCOPUS:85065402062

VL - 109

SP - 270

EP - 275

JO - JETP Letters

JF - JETP Letters

SN - 0021-3640

IS - 4

ER -