Electron Effective Mass and g Factor in Wide HgTe Quantum Wells

S. V. Gudina; V. N. Neverov; E. V. Ilchenko; A. S. Bogolubskii; G. I. Harus; N. G. Shelushinina; S. M. Podgornykh; M. V. Yakunin; N. N. Mikhailov; S. A. Dvoretsky

doi:10.1134/S1063782618010098

Electron Effective Mass and g Factor in Wide HgTe Quantum Wells

S. V. Gudina, V. N. Neverov, E. V. Ilchenko, A. S. Bogolubskii, G. I. Harus, N. G. Shelushinina, S. M. Podgornykh, M. V. Yakunin, N. N. Mikhailov, S. A. Dvoretsky

Учебно-научная лаборатория квантовых явлений в конденсированных системах ФФ

Результат исследования: Научные публикации в периодических изданиях › статья

1 Цитирования (Scopus)

Аннотация

The magnetic-field (0 T < B < 9 T) dependence of the longitudinal and Hall resistances at fixed temperatures (2 K < T < 50 K) for the HgCdTe/HgTe/HgCdTe system with a HgTe quantum well 20.3 nm in width are measured. The activation analysis of the magnetoresistance curves is used as a tool for identifying the mobility gaps between neighboring Landau levels. The activation-energy values obtained from the temperature dependences of the longitudinal resistance in the plateau regions of the quantum Hall effect with the filling factors ν = 1, 2, 3 make it possible to estimate the effective mass and the g factor of electrons in the system under study. Indications concerning the possibility of large values of the g factor (≅ 80) are obtained.

Язык оригинала	английский
Страницы (с-по)	12-18
Число страниц	7
Журнал	Semiconductors
Том	52
Номер выпуска	1
DOI	https://doi.org/10.1134/S1063782618010098
Состояние	Опубликовано - 1 янв 2018

Доступ к документу

10.1134/S1063782618010098

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Цитировать

Gudina, S. V., Neverov, V. N., Ilchenko, E. V., Bogolubskii, A. S., Harus, G. I., Shelushinina, N. G., Podgornykh, S. M., Yakunin, M. V., Mikhailov, N. N., & Dvoretsky, S. A. (2018). Electron Effective Mass and g Factor in Wide HgTe Quantum Wells. Semiconductors, 52(1), 12-18. https://doi.org/10.1134/S1063782618010098

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title = "Electron Effective Mass and g Factor in Wide HgTe Quantum Wells",

abstract = "The magnetic-field (0 T < B < 9 T) dependence of the longitudinal and Hall resistances at fixed temperatures (2 K < T < 50 K) for the HgCdTe/HgTe/HgCdTe system with a HgTe quantum well 20.3 nm in width are measured. The activation analysis of the magnetoresistance curves is used as a tool for identifying the mobility gaps between neighboring Landau levels. The activation-energy values obtained from the temperature dependences of the longitudinal resistance in the plateau regions of the quantum Hall effect with the filling factors ν = 1, 2, 3 make it possible to estimate the effective mass and the g factor of electrons in the system under study. Indications concerning the possibility of large values of the g factor (≅ 80) are obtained.",

author = "Gudina, {S. V.} and Neverov, {V. N.} and Ilchenko, {E. V.} and Bogolubskii, {A. S.} and Harus, {G. I.} and Shelushinina, {N. G.} and Podgornykh, {S. M.} and Yakunin, {M. V.} and Mikhailov, {N. N.} and Dvoretsky, {S. A.}",

year = "2018",

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doi = "10.1134/S1063782618010098",

language = "English",

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Electron Effective Mass and g Factor in Wide HgTe Quantum Wells. / Gudina, S. V.; Neverov, V. N.; Ilchenko, E. V.; Bogolubskii, A. S.; Harus, G. I.; Shelushinina, N. G.; Podgornykh, S. M.; Yakunin, M. V.; Mikhailov, N. N.; Dvoretsky, S. A.

В: Semiconductors, Том 52, № 1, 01.01.2018, стр. 12-18.

Результат исследования: Научные публикации в периодических изданиях › статья

TY - JOUR

T1 - Electron Effective Mass and g Factor in Wide HgTe Quantum Wells

AU - Gudina, S. V.

AU - Neverov, V. N.

AU - Ilchenko, E. V.

AU - Bogolubskii, A. S.

AU - Harus, G. I.

AU - Shelushinina, N. G.

AU - Podgornykh, S. M.

AU - Yakunin, M. V.

AU - Mikhailov, N. N.

AU - Dvoretsky, S. A.

PY - 2018/1/1

Y1 - 2018/1/1

N2 - The magnetic-field (0 T < B < 9 T) dependence of the longitudinal and Hall resistances at fixed temperatures (2 K < T < 50 K) for the HgCdTe/HgTe/HgCdTe system with a HgTe quantum well 20.3 nm in width are measured. The activation analysis of the magnetoresistance curves is used as a tool for identifying the mobility gaps between neighboring Landau levels. The activation-energy values obtained from the temperature dependences of the longitudinal resistance in the plateau regions of the quantum Hall effect with the filling factors ν = 1, 2, 3 make it possible to estimate the effective mass and the g factor of electrons in the system under study. Indications concerning the possibility of large values of the g factor (≅ 80) are obtained.

AB - The magnetic-field (0 T < B < 9 T) dependence of the longitudinal and Hall resistances at fixed temperatures (2 K < T < 50 K) for the HgCdTe/HgTe/HgCdTe system with a HgTe quantum well 20.3 nm in width are measured. The activation analysis of the magnetoresistance curves is used as a tool for identifying the mobility gaps between neighboring Landau levels. The activation-energy values obtained from the temperature dependences of the longitudinal resistance in the plateau regions of the quantum Hall effect with the filling factors ν = 1, 2, 3 make it possible to estimate the effective mass and the g factor of electrons in the system under study. Indications concerning the possibility of large values of the g factor (≅ 80) are obtained.

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