Electron Effective Mass and g Factor in Wide HgTe Quantum Wells

S. V. Gudina, V. N. Neverov, E. V. Ilchenko, A. S. Bogolubskii, G. I. Harus, N. G. Shelushinina, S. M. Podgornykh, M. V. Yakunin, N. N. Mikhailov, S. A. Dvoretsky

Результат исследования: Научные публикации в периодических изданияхстатья

1 Цитирования (Scopus)

Аннотация

The magnetic-field (0 T < B < 9 T) dependence of the longitudinal and Hall resistances at fixed temperatures (2 K < T < 50 K) for the HgCdTe/HgTe/HgCdTe system with a HgTe quantum well 20.3 nm in width are measured. The activation analysis of the magnetoresistance curves is used as a tool for identifying the mobility gaps between neighboring Landau levels. The activation-energy values obtained from the temperature dependences of the longitudinal resistance in the plateau regions of the quantum Hall effect with the filling factors ν = 1, 2, 3 make it possible to estimate the effective mass and the g factor of electrons in the system under study. Indications concerning the possibility of large values of the g factor (≅ 80) are obtained.

Язык оригиналаанглийский
Страницы (с-по)12-18
Число страниц7
ЖурналSemiconductors
Том52
Номер выпуска1
DOI
СостояниеОпубликовано - 1 янв 2018

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  • Цитировать

    Gudina, S. V., Neverov, V. N., Ilchenko, E. V., Bogolubskii, A. S., Harus, G. I., Shelushinina, N. G., Podgornykh, S. M., Yakunin, M. V., Mikhailov, N. N., & Dvoretsky, S. A. (2018). Electron Effective Mass and g Factor in Wide HgTe Quantum Wells. Semiconductors, 52(1), 12-18. https://doi.org/10.1134/S1063782618010098